ssm3k15f TOSHIBA Semiconductor CORPORATION, ssm3k15f Datasheet
ssm3k15f
Manufacturer Part Number
ssm3k15f
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM3K15F.pdf
(5 pages)
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High Speed Switching Applications
Analog Switch Applications
•
•
Absolute Maximum Ratings
Marking
Handling Precaution
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Small package
Low on resistance
: R
: R
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature
Note:
on
on
1
= 4.0 Ω (max) (@V
= 7.0 Ω (max) (@V
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
D P
3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2
GS
GS
Pulse
DC
= 4 V)
= 2.5 V)
(Ta = 25°C)
Equivalent Circuit
Symbol
SSM3K15F
V
V
T
I
T
P
GSS
I
DP
DS
stg
D
ch
D
1
−55~150
Rating
3
±20
100
200
200
150
30
1
2
Unit
mW
mA
°C
°C
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
S-MINI
1
2
TO-236MOD
1.5-0.15
1.Gate
2.Source
3.Drain
2.5-0.3
SSM3K15F
+0.25
2-3F1F
SC-59
+0.5
2007-11-01
3
Unit: mm
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ssm3k15f Summary of contents
Page 1
... Symbol Rating Unit ± GSS I 100 200 DP P 200 mW D °C T 150 ch −55~150 °C T stg Equivalent Circuit SSM3K15F Unit: mm +0.5 2.5-0.3 +0.25 1.5-0. 1.Gate 2.Source 3.Drain S-MINI JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) 2007-11-01 ...
Page 2
... 0 off ( Output OUT requires higher voltage than V GS (on) < V < (off (on) 2 SSM3K15F Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 30 ⎯ ⎯ 1 ⎯ 0.8 1.5 ⎯ ⎯ 25 ⎯ 2.2 4.0 ⎯ 4.0 7.0 ⎯ ⎯ 7.8 ⎯ ...
Page 3
... Gate-source voltage V 2 Common Source 1 0 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 125 150 0 Ambient temperature Ta (°C) 3 SSM3K15F I – −25° ( – (ON) GS Common Source 100°C 25°C −25° ( – ...
Page 4
... C iss C oss 100 C rss 50 0 100 0 20 Ambient temperature Ta (°C) 4 SSM3K15F I – −0.4 −0.6 −0.8 −1 −1.2 −1.4 ( – Common Source 0~2 25° ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K15F 20070701-EN GENERAL 2007-11-01 ...