ssm3k127tu TOSHIBA Semiconductor CORPORATION, ssm3k127tu Datasheet - Page 4

• Manufacturer Part Number: ssm3k127tu
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

400
300
200
100
400
300
200
100
0
0
4
3
2
1
0
−50
0
0
Common Source
4.0 V
Gate–source voltage V
Drain–source voltage V
2
Ambient temperature Ta (°C)
10 V
0.2
0.8 A / 2.5 V
0
R
DS (ON)
4
R
0.4
DS (ON)
I
D
– V
50
6
– V
2.5 V
DS
I D = 0.5 A / V GS = 1.8 V
0.6
– Ta
GS
25 °C
8
GS
Common Source
Ta = 25 °C
I D =1.0A
Common Source
DS
1.0 A / 4.0 V
100
VGS = 1.2 V
0.8
Ta = 100 °C
(V)
(V)
10
− 25 °C
1.8 V
1.5 V
150
1.0
12
4
0.0001
0.001
400
300
200
100
0.01
0.1
10
1.0
0.5
0
1
0
−50
0
0
1.8 V
2.5 V
VGS = 4.0V
Common Source
Ta = 25°C
Common Source
V DS = 3 V
Ta = 100 °C
Gate–source voltage V
Ambient temperature Ta (°C)
Drain current I
1
0
R
DS (ON)
I
D
V
− 25 °C
– V
th
1.0
2
50
– Ta
GS
– I
D
D
25 °C
(A)
SSM3K127TU
GS
Common Source
V DS = 3 V
I D = 1 mA
100
3
(V)
2007-11-13
150
2.0
4