ssm3k14t TOSHIBA Semiconductor CORPORATION, ssm3k14t Datasheet - Page 4

• Manufacturer Part Number: ssm3k14t
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.5
0.3
0.1
3.5
2.5
1.5
0.5
50
30
10
10
0.01
5
3
1
8
6
4
2
0
4
3
2
1
0
0
0
V DS = 5 V
Common Source
Ta = 25°C
Common Source
V GS = 0
Ta = 25°C
G
2
−0.2
Drain-Source voltage V DS (V)
Dynamic Input Characteristic
Total Gate charge Qg (nC)
D
S
Drain current I D (A)
0.1
4
−0.4
I
I DR
DR
|Y
fs
– V
| – I
6
DS
D
−0.6
12 V
1
8
I D = 4 A
Common Source
Ta = 25°C
V DD = 24 V
−0.8
10
10
12
−1
4
1000
1000
500
300
100
500
300
100
50
30
10
50
30
10
0.01
0.1
5
3
1
Common Source
V GS = 0
f = 1 MHz
Ta = 25°C
t on
t f
t r
Drain-Source voltage V DS (V)
t off
Drain current I D (A)
0.1
1
C – V
t – I
D
DS
10
1
V DD = 15 V
Common Source
V GS = 0~4 V
R g = 10 Ω
Ta = 25°C
SSM3K14T
C iss
C oss
C rss
2007-11-01
100
10