ssm3k333r TOSHIBA Semiconductor CORPORATION, ssm3k333r Datasheet - Page 4

• Manufacturer Part Number: ssm3k333r
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type U-mos Vii-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.001
10
0.001
0.01
1000
1
100
0.1
100
10
10
1
1
0
0.01
t on
G
t f
t r
Common Source
V GS = 0 V
Pulse test
t off
Single pulse
a. Mounted on FR4 board
b. Mounted on FR4 board
0.01
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm
Drain–source voltage V
S
-0.2
D
0.1
I
DR
100 °C
Pulse width t
0.1
Drain current I
-0.4
R
I
DR
th
t – I
–
-0.6
1
– V
1
t
w
D
DS
w
10
-0.8
D
(s)
Common Source
V DD = 15 V
V GS = 0 to 4.5 V
Ta = 25 °C
R G = 10 Ω
−25 °C
DS
(A)
10
25 °C
100
(V)
-1.0
b
a
2
)
2
×3)
1000
100
-1.2
4
1000
1600
1200
10
800
400
300
100
8
6
4
2
0
30
10
0
0.1
0
-40
Common Source
I D = 6.0A
Ta = 25°C
a: Mounted on FR4 board
b: Mounted on FR4 board
Common Source
Ta = 25 °C
f = 1 MHz
V GS = 0 V
(25.4mm × 25.4mm × 1.6 mm , Cu Pad : 645 mm
(25.4mm × 25.4mm × 1.6 mm , Cu Pad : 0.72 mm
b
a
-20
Drain–source voltage V
V DD =15 V
Ambient temperature Ta (°C)
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
2
0
20
1
4
C – V
40
P
D
– Ta
60
DS
V DD =24 V
6
80
10
DS
SSM3K333R
100
(V)
120
8
2010-11-17
C iss
C oss
C rss
2
)
2
×3)
140
100
10
160