ssm3k04fe TOSHIBA Semiconductor CORPORATION, ssm3k04fe Datasheet - Page 2

• Manufacturer Part Number: ssm3k04fe
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
(a)
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Gate-source resistor
Test circuit
Characteristics
Turn-on time
Turn-off time
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
R
C
C
GSS
DSS
V
t
t
oss
on
off
rss
GS
iss
th
fs
⎪
V
I
V
V
V
I
V
V
V
V
V
V
D
D
GS
DS
DS
DS
DS
DS
DS
DD
DD
GS
= 100 μA, V
= 10 mA, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= 10 V, V
= 3 V, I
= 3 V, I
= 0~10 V
2
(b)
(c)
D
D
D
D
Test Condition
GS
GS
GS
GS
= 0.1 mA
= 10 mA
DS
GS
= 10 mA, V
= 10 mA, V
GS
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 2.5 V
= 0
= 0
V
V
V
V
= 0
IN
GS
OUT
DS
GS
GS
= 0~2.5 V
= 0~2.5 V
Min
0.7
0.7
20
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
11.0
0.16
0.19
3.3
9.3
1.0
50
⎯
⎯
⎯
⎯
4
SSM3K04FE
2007-11-01
Max
1.3
1.3
15
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit
MΩ
mS
μA
μA
pF
pF
pF
μs
Ω
V
V