ssm3j118tu TOSHIBA Semiconductor CORPORATION, ssm3j118tu Datasheet
ssm3j118tu
Manufacturer Part Number
ssm3j118tu
Description
Field-effect Transistor Silicon P-channel Mos Type High-speed Switching Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM3J118TU.pdf
(5 pages)
High-Speed Switching Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
4 V drive
Low ON-resistance:
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on a ceramic board.
Note 2: Mounted on an FR4 board.
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Drain–source forward voltage
Note 3: Pulse test
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
DC
Pulse
R
R
on
on
= 480 mΩ (max) (@V
= 240 mΩ (max) (@V
(Ta = 25°C)
SSM3J118TU
V
V
P
P
R
Symbol
(Ta = 25°C)
Symbol
(BR) DSS
(BR) DSX
D (Note 1)
D (Note 2)
⏐Y
DS (ON)
V
I
I
C
V
C
C
DSS
GSS
V
V
t
t
T
DSF
T
I
oss
on
off
GSS
rss
iss
I
DP
th
fs
DS
stg
D
ch
⏐
I
I
V
V
V
V
I
I
V
V
V
V
V
I
D
D
D
D
D
DS
GS
DS
DS
DS
DS
DS
DD
GS
GS
GS
= −1 mA, V
= −1 mA, V
= −0.65 A, V
= −0.4 A, V
= 1.4 A, V
−55 to 150
= −30 V, V
= −5 V, I
= −5 V, I
= −15 V, V
= −15 V, V
= −15 V, V
= −15 V, I
= ±16 V, V
= 0 to −4 V, R
Rating
= −4 V)
= −10 V)
−1.4
−2.8
± 20
−30
800
500
150
2
2
1
)
)
Test Condition
GS
D
D
GS
GS
GS
D
GS
= −1 mA
=− 0.65 A
GS
DS
GS
GS
GS
= 0 V
= −0.65 A,
= 0
= + 20 V
= −4 V
= −10 V
G
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 10 Ω
Unit
mW
°C
°C
V
V
A
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Weight: 6.6 mg (typ.)
JEDEC
JEITA
TOSHIBA
UFM
−1.2
Min
−30
−15
0.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1: Gate
2: Source
3: Drain
1
2
Typ.
0.85
180
360
137
SSM3J118TU
1.5
39
20
15
14
⎯
⎯
⎯
⎯
⎯
2.1±0.1
1.7±0.1
2-2U1A
2007-11-01
―
―
Max
−2.6
240
480
1.2
⎯
⎯
−1
±1
⎯
⎯
⎯
⎯
⎯
⎯
3
Unit: mm
Unit
mΩ
μA
μA
pF
pF
pF
ns
V
V
S
V
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ssm3j118tu Summary of contents
Page 1
... − −0. − Ω off = 1 DSF SSM3J118TU 2.1±0.1 1.7±0 Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Min Typ. Max −30 ⎯ ...
Page 2
... V IN OUT OUT V Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on). 2 SSM3J118TU 0 V 10% 90% − (ON) 90% 10 off D and V requires a lower th GS (off) ) 2007-11- −1 mA for ...
Page 3
... Common source − − −50 150 Ambient temperature Ta (°C) 3 SSM3J118TU I – 100 °C 25 °C −25 °C –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 ( – (ON) D – ...
Page 4
... Mounted on a ceramic board (25.4 x 25 Pad : 645 Mounted on an FR4 board (25.4 x 25 Pad : 645 Mounted on an FR4 board (25.4 x 25 Pad : 0. 140 160 0.001 0.01 4 SSM3J118TU I – 100 °C 25 °C −25 °C 0.4 0.6 0.8 1.0 1 ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J118TU 20070701-EN GENERAL 2007-11-01 ...