ne687m33-t3 Renesas Electronics Corporation., ne687m33-t3 Datasheet - Page 3

• Manufacturer Part Number: ne687m33-t3
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
0.0001
Remark The graphs indicate nominal characteristics.
0.001
0.01
250
200
150
100
100
0.1
50
10
35
30
25
20
15
10
90
0
1
5
0
0.4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
500 A
V
TOTAL POWER DISSIPATION
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
vs. AMBIENT TEMPERATURE
450 A
CE
µ
Collector to Emitter Voltage V
0.5
25
= 1 V
Base to Emitter Voltage V
µ
Ambient Temperature T
1
Mounted on Glass Epoxy PCB
(1.08 cm
400 A
0.6
50
µ
2
75
× 1.0 mm (t) )
0.7
2
350 A
µ
100
0.8
A
A
BE
3
(˚C)
= +25°C ,unless otherwise specified)
I
CE
B
(V)
125
0.9
= 50 A
(V)
300 A
250 A
200 A
150 A
100 A
Data Sheet PU10342EJ02V0DS
µ
µ
µ
µ
µ
µ
150
1.0
4
0.0001
0.001
0.01
100
0.6
0.5
0.4
0.3
0.2
0.1
0.1
10
0
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
0.5
= 2 V
Collector to Base Voltage V
Base to Emitter Voltage V
1
0.6
2
0.7
3
0.8
f = 1 MHz
BE
NE687M33
CB
(V)
4
0.9
(V)
1.0
5
3