fds8958a-nf073 Fairchild Semiconductor, fds8958a-nf073 Datasheet

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fds8958a-nf073

Manufacturer Part Number
fds8958a-nf073
Description
Fds8958a Dual N & P-channel Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDS8958A-NF073.pdf (9 pages)
FDS8958A
Dual N & P-Channel PowerTrench
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
©2007 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
V
V
I
P
E
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
DSS
GSS
D
AS
J
θJA
θJC
, T
Device Marking
STG
FDS8958A
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D1
Pin 1
D
D1
SO-8
D
advanced
D2
- Continuous
- Pulsed
D
FDS8958A
D2
Device
Parameter
S1
S
G1
PowerTrench
S
S2
S
G2
T
G
A
= 25°C unless otherwise noted
® ® ® ®
Reel Size
MOSFET
13”
(Note 1a)
(Note 1a)
(Note 1c)
(Note 3)
(Note 1a)
(Note 1)
Features
•
•
•
•
Q1:
7.0A, 30V
Q2:
-5A, -30V
Fast switching speed
High power and handling capability in a widely
used surface mount package
N-Channel
P-Channel
Q1
±20
1.6
0.9
30
20
54
5
6
7
8
7
2
Tape width
-55 to +150
R
R
R
R
12mm
DS(on)
DS(on)
DS(on)
DS(on)
Q2
Q1
78
40
= 0.028Ω @ V
= 0.040Ω @ V
= 0.052Ω @ V
= 0.080Ω @ V
Q2
±20
-20
1.6
0.9
30
13
-5
2
February 2007
4
3
2
1
GS
GS
GS
GS
FDS8958A Rev F1(W)
2500 units
Quantity
= 10V
= 4.5V
= -10V
= -4.5V
Units
°C/W
°C/W
mJ
°C
W
V
V
A
tm

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fds8958a-nf073 Summary of contents

Page 1

... Reel Size 13” February 2007 0.028Ω 10V DS(on 0.040Ω 4.5V DS(on 0.052Ω -10V DS(on 0.080Ω -4.5V DS(on Units ± - 1.6 0 -55 to +150 °C 78 °C/W 40 °C/W Tape width Quantity 12mm 2500 units FDS8958A Rev F1(W) ...

Page 2

... Q1 1 µ All 100 nA All -100 1 -1 -4.5 mV/° mΩ - 575 pF Q2 528 Q1 145 pF Q2 132 2.1 Ω Q2 6.0 FDS8958A Rev F1 (W) ...

Page 3

... Typ Max Units 2 1 -1.3 Q1 0.75 1 -0.88 -1 135°/W when mounted on a minimum pad. FDS8958A Rev F1 (W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0 4.5V 5.0 6.0V 10. DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) SD FDS8958A Rev F1 (W) 10 ...

Page 5

... Figure 10. Unclamped Inductive Switching 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS Tj=25 Tj=125 0 100 t , TIME IN AVALANCHE (mS) AV Capability Figure SINGLE PULSE R = 135° C/W θ 25° 100 1000 FDS8958A Rev F1 (W) ...

Page 6

... Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. =-4.0V -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 1 BODY DIODE FORWARD VOLTAGE (V) SD FDS8958A Rev F1 (W) ...

Page 7

... Figure 21. Unclamped Inductive Switching 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS Tj=25 ¡ Tj=125 ¡ 0 TIME IN AVALANCHE (mS) AV Capability Figure SINGLE PULSE R = 125° C/W θ 25° 100 1000 FDS8958A Rev F1 (W) 30 ...

Page 8

... Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 0.01 0 TIME (sec ( θJA θ 135 /W ¢ θJA P(pk ( θJA Duty Cycle 100 1000 FDS8958A Rev F1 (W) ...

Page 9

... This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ® UniFET™ VCX™ Wire™ ® ® Definition Rev. I22 FDS8958A Rev F1 (W) ...

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