2sk1846 Panasonic Corporation of North America, 2sk1846 Datasheet
2sk1846
Manufacturer Part Number
2sk1846
Description
Silicon N-channel Power F-mos Fet
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SK1846.pdf
(4 pages)
Power F-MOS FETs
2SK1846
Silicon N-Channel Power F-MOS FET
*
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Avalanche energy capacity guaranteed: EAS > 20mJ
V
High-speed switching: t
No secondary breakdown
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
L = 4.5mH, I
Features
Applications
Absolute Maximum Ratings
Electrical Characteristics
GSS
= ±30V guaranteed
Parameter
Parameter
L
= 3A, V
DC
Pulse
T
Ta = 25°C
C
DD
= 25°C
= 50V, 1 pulse
f
= 35ns
Symbol
V
V
I
I
EAS
P
T
T
Symbol
I
I
V
V
R
| Y
V
C
C
C
t
t
t
R
on
f
d(off)
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
th(ch-c)
DSS
GSS
DSS
th
DSF
fs
(T
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
GS
DD
55 to +150
Ratings
= 1mA, V
= 3A, V
= 640V, V
= ±30V, V
= 25V, I
= 10V, I
= 25V, I
= 20V, V
= 10V, I
800
±30
150
= 200V, R
1.3
±3
±6
20
40
GS
Conditions
DS
D
D
D
D
GS
= 1mA
= 2A
= 2A
= 0
= 2A
GS
DS
L
= 0
= 0, f = 1MHz
= 100
= 0
= 0
Unit
mJ
°C
°C
W
V
V
A
A
min
800
1.5
1
1
5.08±0.5
8.5±0.2
6.0±0.5
2
3
2.54±0.3
730
105
typ
3.2
2.4
90
40
40
35
0.8±0.1
1.5max.
3.125
max
0.1
±1
1.6
5
4
N Type Package
3.4±0.3
1: Gate
2: Drain
3: Source
unit: mm
0.5max.
°C/W
1.0±0.1
1.1max.
Unit
mA
pF
pF
pF
ns
ns
ns
V
V
V
S
A
1
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2sk1846 Summary of contents
Page 1
... Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed: EAS > 20mJ V = ±30V guaranteed GSS High-speed switching 35ns f No secondary breakdown Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply ...
Page 2
... Non repetitive pulse T =25˚ t< t=100 s 0.3 1ms 0.1 DC 10ms 0.03 0. 100 300 1000 ( V ) Drain to source voltage V DS 2SK1846 R I DS(on =10V =150˚ 100˚C 4 25˚C 0˚ Drain current I D ...
Page 3
... V DS 400 10 300 7 200 5 100 2 Gate charge amount Q g Avalanche energy capacity test circuit 2SK1846 =25˚ = 0.75A Gate to source voltage ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...