2sk1940 ETC-unknow, 2sk1940 Datasheet
2sk1940
Manufacturer Part Number
2sk1940
Description
N-channel Mos-fet
Manufacturer
ETC-unknow
Datasheet
1.2SK1940.pdf
(2 pages)
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- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V
- Avalanche Proof
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
- Absolute Maximum Ratings (T
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
- Electrical Characteristics (T
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
Turn-Off-Time t
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
Item
Thermal Resistance
> Features
> Applications
> Maximum Ratings and Characteristics
Thermal Characteristics
GS
= ± 30V Guarantee
on
off
(t
(t
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
on
on
=t
=t
GS
d(off)
d(on)
=20K )
+t
+t
f
r
)
)
C
=25°C),
C
FAP-IIA Series
=25°C),
2SK1940-01
unless otherwise specified
unless otherwise specified
Q
R
C
C
C
R
R
V
V
V
P
V
V
V
T
T
Symbol
Symbol
g
Symbol
I
I
I
I
t
t
t
t
I
I
I
t
DS
DGR
D
D(puls)
GS
D
ch
stg
(BR)DSS
GS(th)
DSS
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
DR
DRM
SD
rr
rr
th(ch-a)
th(ch-c)
I
I
V
V
V
I
I
L = 100µH
channel to air
channel to case
D
D
D
D
DS
GS
GS
=1mA
=1mA
=6A
=6A
I
F
-55 ~ +150
-dI
=2xI
=600V
=0V
=±30V
Rating
F
/dt=100A/µs T
Test conditions
Test conditions
DR
I
F
=I
600
600
±30
125
150
V
R
V
V
V
12
48
DR
V
f=1MHz
CC
GS
GS
DS
GS
I
GS
D
=300V
=10
=6A
=0V T
V
V
T
T
V
V
V
=25V
=10V
T
=0V
V
ch
ch
ch
GS
DS=
DS
GS
DS
GS
=25°C
=125°C
=25°C
=0V
=0V
=10V
=25V
V
=0V
GS
ch
Unit
ch
°C
°C
W
V
V
A
A
V
=25°C
=25°C
> Outline Drawing
> Equivalent Circuit
600V
N-channel MOS-FET
Min.
Min.
600
2,5
12
6
Typ.
Typ.
2500
0,55
1,05
220
140
450
3,0
0,2
10
10
12
50
30
60
80
3
Max.
Max.
12A
3800
0,75
1,58
1,25
35
500
100
330
210
120
3,5
1,0
75
45
90
12
48
125W
°C/W
°C/W
Unit
Unit
mA
µC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
A
V
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2sk1940 Summary of contents
Page 1
... Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com 2SK1940-01 FAP-IIA Series =25°C), unless otherwise specified Symbol Rating V 600 DS V ...
Page 2
... DS Typical Drain-Source-On-State-Resistance vs [A] D Typical Capacitance vs [V] DS Allowable Power Dissipation vs [°C] c 2SK1940-01 FAP-IIA Series Drain-Source-On-State Resistance vs [°C] ch Typical Forward Transconductance vs [A] D Typical Input Charge 8 Q [nC] g Safe operation area 12 ...