hufa75617d3 Fairchild Semiconductor, hufa75617d3 Datasheet

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hufa75617d3

Manufacturer Part Number
hufa75617d3
Description
16a, 100v, 0.090 Ohm, N-channel, Ultrafet Power Mosfets
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
HUFA75617D3
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
16A, 100V, 0.090 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTE: T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
(FLANGE)
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DRAIN
Continuous (T
Continuous (T
JEDEC TO-251AA
HUFA75617D3
J
= 25
o
C to 150
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
C
C
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 25
= 100
SOURCE
GS
DRAIN
G
o
o
C.
C, V
o
GATE
C, V
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
D
S
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SOURCE
GATE
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
T
Data Sheet
C
JEDEC TO-252AA
HUFA75617D3S
= 25
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
HUFA75617D3, HUFA75617D3S
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75617D3ST.
HUFA75617D3
HUFA75617D3S
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
Electrical Models
DS(ON)
December 2001
J
, T
= 0.090
DGR
DSS
STG
pkg
DM
GS
D
D
D
L
TO-251AA
TO-252AA
V
PACKAGE
GS
HUFA75617D3S
Figures 6, 14, 15
HUFA75617D3,
-55 to 175
Figure 4
10V
0.43
100
100
300
260
16
11
64
20
75617D
75617D
HUFA75617D3 Rev. B
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
C
C
C
o
C

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hufa75617d3 Summary of contents

Page 1

... Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PART NUMBER HUFA75617D3 HUFA75617D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75617D3ST Unless Otherwise Specified , 0.090 V ...

Page 2

... SD SD MIN TYP 100 - - - 0.080 - - - - - - - 50V 1.0mA - 1.3 - 2.7 - 6.4 - 570 - 125 - 20 MIN TYP - - - - - - - - MAX UNITS - 250 A 100 0.090 ¾ o 2.34 C/W o 100 C 108 1 MAX UNITS 1. 170 nC HUFA75617D3 Rev. B ...

Page 3

... C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUFA75617D3 Rev. B 175 ...

Page 4

... PULSE DURATION = DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 1 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE ) - 250 120 160 200 o C) HUFA75617D3 Rev. B ...

Page 5

... FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 50V WAVEFORMS IN 4 DESCENDING ORDER GATE CHARGE (nC OSS DS GD 100 C C RSS GD 10 0.1 1 DRAIN TO SOURCE VOLTAGE ( 16A 10A 0V 1MHz ISS GS GD 100 HUFA75617D3 Rev. B ...

Page 6

... DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. SWITCHING TIME WAVEFORM 20V GS t OFF d(OFF 90% 10% 90% 50% HUFA75617D3 Rev. B ...

Page 7

... PSPICE Electrical Model .SUBCKT HUFA75617d3 9.9e- 1.0e-9 CIN 6 8 5.4e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 117.8 EDS EGS ESG EVTHRES EVTEMP LDRAIN ...

Page 8

... S1A S2A S1B S2B EGS RSLC1 51 ISCL DBREAK 50 RDRAIN MWEAK 8 EBREAK MMED + MSTRO 17 18 CIN - 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES LDRAIN DRAIN 2 RLDRAIN DBODY LSOURCE SOURCE 3 VBAT HUFA75617D3 Rev. B ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUFA75617D3 Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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