m36p0r8070e0 STMicroelectronics, m36p0r8070e0 Datasheet - Page 20

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m36p0r8070e0

Manufacturer Part Number
m36p0r8070e0
Description
256 Mbit X16, Multiple Bank, Multilevel, Burst Flash Memory 128 Mbit Burst Psram, 1.8 V Supply, Multichip Package
Manufacturer
STMicroelectronics
Datasheet

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Part numbering
7
Note:
20/22
Part numbering
Table 7.
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of
available options (speed, package, etc.) or for further information on any aspect of this
device, please contact the STMicroelectronics sales office nearest to you.
Device type
M36 = multichip package (Flash + PSRAM)
Flash 1 architecture
P = Multilevel, multiple bank, large buffer
Flash 2 architecture
0 = no die
Operating voltage
R = V
Flash 1 density
8 = 256 Mbits
Flash 2 density
0 = no die
RAM 1 density
7 = 128 Mbits
RAM 0 density
0 = no Die
Parameter blocks location
E = even block flash memory configuration
Product version
0 = 90 nm Flash technology, 93 ns speed; 0.11 µm PSRAM technology, 70 ns speed
Package
ZAC = stacked TFBGA107 C stacked footprint.
Option
E = ECOPACK package, standard packing
F = ECOPACK package, tape and reel packing
Example:
DDF
= V
Ordering information scheme
CCP
= V
DDQ
= 1.7 to 1.95 V
M36 P
0
R 8
0
7
0
E 0
M36P0R8070E0
ZAC
E

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