njg1119pb4 New Japan Radio Co.,Ltd, njg1119pb4 Datasheet - Page 19
![no-image](/images/no-image-200.jpg)
njg1119pb4
Manufacturer Part Number
njg1119pb4
Description
Njg1119pb4 W-cdma Dual Lna Gaas Mmic
Manufacturer
New Japan Radio Co.,Ltd
Datasheet
1.NJG1119PB4.pdf
(24 pages)
- Current page: 19 of 24
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ELECTRICAL CHARACTERISTICS 14(800MHz band Low Gain Mode)
-10
-11
16
14
12
10
30
25
20
15
10
-3
-4
-5
-6
-7
-8
-9
8
6
4
2
5
0
-50
-50
-50
(f=885M Hz, V
(V
(f=885M Hz, V
DD
P-1dB(IN)
=V
Gain
P-1dB(IN) vs. Tem perature
INV
Gain, NF vs. Temperature
=2.7V, V
IDD vs. Tem perature
DD
DD
Tem perature (
Tem perature (
=V
Tem perature (
0
0
=V
0
CTL
INV
INV
=2.7V, V
1=2.7V, V
=2.7V, V
CTL
CTL
CTL
1=2.7V, V
2=0V, PRF=OFF)
1=2.7V, V
o
o
50
50
C)
50
C)
o
IDD
C)
CTL
CTL
2=0V)
NF
2=0V)
100
100
100
11
10
9
8
7
6
5
4
3
(f=885+885.1MHz, Pin=-20dBm , V
-10
-15
-20
-25
3.5
2.5
1.5
0.5
10
-5
5
0
4
3
2
1
0
-50
-50
(f=885M Hz, V
OIP3
O IP3, IIP3 vs. Temperature
VSW R vs. Temperature
DD
Tem perature (
=V
Tem perature (
0
0
INV
=2.7V, V
D D
=V
NJG1119PB4
CTL
INV
1=2.7V, V
=2.7V, V
o
50
50
C)
o
C)
C TL
C TL
VSW Ri
VSW Ro
1=2.7V, V
IIP3
2=0V)
CTL
100
100
2=0V)
25
20
15
10
5
0
-5
-10
- 19 -
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