std19ne06 STMicroelectronics, std19ne06 Datasheet

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std19ne06

Manufacturer Part Number
std19ne06
Description
N-channel 60v - 0.042 W - 19a Ipak/dpak Stripfet Power Mosfet
Manufacturer
STMicroelectronics
Datasheet

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Quantity
Price
Part Number:
STD19NE06
Manufacturer:
ST
Quantity:
12 500
Part Number:
STD19NE06
Manufacturer:
ST
0
Part Number:
std19ne06-1
Manufacturer:
ST
0
Part Number:
std19ne06L
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ST
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Part Number:
std19ne06L-1
Manufacturer:
ST
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Part Number:
std19ne06L1
Manufacturer:
TI
Quantity:
2 789
Part Number:
std19ne06T4
Manufacturer:
ST
0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
March 2002
.
STD19NE06
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
Pulse width limited by safe operating area
Symbol
E
I
V
DM
V
V
P
AS (1)
T
DGR
I
I
T
GS
stg
DS
TYPE
D
D
tot
o
(
j
C OPERATING TEMPERATURE
therefore
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.042
a
V
60 V
DSS
remarkable
Parameter
N-CHANNEL 60V - 0.042
<0.050
R
DS(on)
C
GS
= 25°C
GS
= 20 k )
manufacturing
= 0)
C
C
19 A
= 25°C
= 100° C
I
D
STripFET™ POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) Starting T
(Suffix “-1”)
j
TO-251
= 25
IPAK
-55 to 175
o
Value
C, I
± 20
13.5
0.46
1.45
60
60
19
76
70
D
1
= 30A, V
2
- 19A IPAK/DPAK
3
STD19NE06
DD
= 30 V
(Suffix “T4”)
TO-252
DPAK
1
W/°C
Unit
mJ
3
°C
W
V
V
V
A
A
A
1/9

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std19ne06 Summary of contents

Page 1

... STripFET™ POWER MOSFET TO-251 (Suffix “-1”) INTERNAL SCHEMATIC DIAGRAM manufacturing = 25° 100° 25°C (1) Starting STD19NE06 - 19A IPAK/DPAK IPAK DPAK TO-252 (Suffix “T4”) Value Unit ± ...

Page 2

... STD19NE06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current ( Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter ...

Page 3

... (Inductive Load, Figure 5) Test Conditions Min di/dt = 100A/µ 150° (see test circuit, Figure 5) Thermal Impedance STD19NE06 Typ. Max. Unit Typ. Max. Unit Typ ...

Page 4

... STD19NE06 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature . . STD19NE06 5/9 ...

Page 6

... STD19NE06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... L2 0.8 L2 MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 STD19NE06 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 0068771-E 7/9 ...

Page 8

... STD19NE06 TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4 0.6 L2 8/9 mm TYP. MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 0.8 1 0.023 H DETAIL "A" inch TYP. MAX. 0.094 0.043 0.009 0.035 ...

Page 9

... All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 2002 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com STD19NE06 9/9 ...

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