am41dl6408h Meet Spansion Inc., am41dl6408h Datasheet - Page 26

• Manufacturer Part Number: am41dl6408h
• Description: Stacked Multi-chip Package Mcp Flash Memory And Sram 64 Megabit 8 M X 8-bit/4 M X 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 8 Mbit 1 M X 8-bit/512 K X 16-bit Static Ram
• Manufacturer: Meet Spansion Inc.

24
(Word Mode)
(Word Mode)
(Word Mode)
Addresses
Addresses
Addresses
1Ah
1Bh
1Ch
1Dh
1Eh
2Ah
2Bh
2Ch
2Dh
2Eh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Fh
30h
(Byte Mode)
(Byte Mode)
(Byte Mode)
Addresses
Addresses
Addresses
2Ch
3Ch
4Ch
5Ch
20h
22h
24h
26h
28h
2Ah
2Eh
30h
32h
34h
36h
38h
3Ah
3Eh
40h
42h
44h
46h
48h
4Ah
4Eh
50h
52h
54h
56h
58h
5Ah
5Eh
60h
A D V A N C E
Table 10. CFI Query Identification String
Table 12. Device Geometry Definition
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0003h
0000h
0009h
0000h
0005h
0000h
0004h
0000h
0017h
0002h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
Data
Table 11. System Interface String
Data
Data
Am41DL6408H
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
I N F O R M A T I O N
Min. (write/erase)
Max. (write/erase)
N
byte
PP
PP
Description
Description
Description
N
times typical
pin present)
pin present)
N
N
times typical (00h = not supported)
N
times typical
ms (00h = not supported)
N
N
times typical
N
N
N
µ
s (00h = not supported)
ms
µs
November 24, 2003