k4t1g084qq Samsung Semiconductor, Inc., k4t1g084qq Datasheet - Page 6

• Manufacturer Part Number: k4t1g084qq
• Description: 1gb Q-die Ddr2 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QQ
K4T1G164QQ
K4T1G044QQ
Note :
1. Pins B3 and A2 have identical capacitances as pins B7 and A8.
2. For a Read, when enabled, strrobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS & DQS and
3. The function of DM or RDQS/RDQS is enabled by EMRS command.
4. VDDL and VSSDL are power and ground for the DLL. It is recommended that they be isolated on the device from VDD,VD-
input data masking function is disabled.
DQ, VSS, and VSSQ.
G
A
B
C
D
E
F
H
K
L
J
3.2 x8 package pinout (Top View) : 60ball FBGA Package
Top view
(See the balls through the Package)
Ball Locations (x8)
VDDQ
VDDL
VDD
VDD
DQ6
DQ4
BA2
VSS
1
Populated ball
Ball not populated
NU/RDQS
A10/AP
VSSQ
VSSQ
VREF
CKE
DQ1
BA0
A12
A3
A7
2
DM/RDQS
VDDQ
VSS
DQ3
VSS
BA1
WE
NC
A1
A5
A9
3
6 of 44
4
5
A
B
C
D
E
G
H
K
F
J
L
6
1
VSSDL
VDDQ
VSSQ
DQS
DQ2
RAS
CAS
A11
NC
2
A2
A6
7
3
4
VSSQ
VSSQ
DQS
DQ0
5
A13
CK
CK
CS
A0
A4
A8
8
6
7
8
VDDQ
VDDQ
ODT0
VDD
VDD
DQ7
DQ5
VSS
Rev. 1.03 February 2008
9
9
DDR2 SDRAM