k4t1g084qm-zcd5 Samsung Semiconductor, Inc., k4t1g084qm-zcd5 Datasheet - Page 21

• Manufacturer Part Number: k4t1g084qm-zcd5
• Description: 1gb M-die Ddr2 Sdram Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

1Gb M-die DDR2 SDRAM
Exit active power down
to read command
(slow exit, lower
power)
CKE minimum pulse
width
(high and low pulse
width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-
Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-
Down mode)
ODT to power down
entry latency
ODT power down exit
latency
OCD drive mode
output delay
Minimum time clocks
remains ON after CKE
asynchronously drops
LOW
Parameter
Symbol
tXARDS
t
t
t
t
t
t
t
tANPD
tAXPD
tOIT
tDelay
CKE
AOND
AON
AONPD
AOFD
AOF
AOFPD
tIS+tCK
tAC(min)
tAC(mi
tAC(mi
tAC(mi
6 - AL
min
n)+2
n)+2
+tIH
2.5
n)
3
DDR2-533
2
3
8
0
2tCK+t
AC(ma
2.5tCK
tAC(m
tAC(ma
tAC(m
ax)+1
x)+ 0.6
ax)+1
max
x)+1
2.5
12
2
+
tIS+tCK
tAC(mi
tAC(mi
tAC(mi
tAC(mi
Page 21 of 29
6 - AL
min
n)+2
n)+2
+tIH
2.5
n)
n)
3
2
3
8
0
DDR2-400
tAC(ma
tAC(max
tAC(ma
(max)+
2tCK+t
2.5tCK
max
)+ 0.6
x)+1
x)+1
AC
2.5
12
2
1
+
Units
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
Notes
13, 25
9, 10
36
26
24
Rev.1.1 Jan. 2005
DDR2 SDRAM