k4d261638f Samsung Semiconductor, Inc., k4d261638f Datasheet - Page 16

• Manufacturer Part Number: k4d261638f
• Description: 128mbit Gddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

AC CHARACTERISTICS (II - 2)
AC CHARACTERISTICS (I - 2)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
K4D261638F-TC40
K4D261638F-TC36
K4D261638F-TC50
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge @Normal Pre-
charge
Last data in to Row precharge @Auto Pre-
charge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery + Precharge
Exit self refresh to read command
Power down exit time
Refresh interval time
K4D261638F
250MHz ( 4.0ns )
200MHz ( 5.0ns )
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
200MHz ( 5.0ns )
Frequency
Frequency
Frequency
Parameter
Cas Latency
Cas Latency
Cas Latency
4
3
3
3
3
3
tRC
tRC
tRC
13
12
16
13
12
12
tRC
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
tWR
tWR_A
tCDLR
tCCD
tMRD
tDAL
tXSR
tPDEX
tREF
Symbol
tRFC
tRFC
tRFC
15
14
17
15
14
14
3tCK
Min
200
+tIS
7.8
16
17
11
4
2
5
3
4
4
2
1
2
9
tRAS
tRAS
tRAS
-36
11
9
8
9
8
8
- 16 -
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tRCDRD tRCDWR
tRCDRD tRCDWR
tRCDRD tRCDWR
4
4
4
4
4
4
3tCK
Min
+tIS
200
7.8
13
15
9
4
2
4
3
3
3
2
1
2
7
-40
2
2
2
2
2
2
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
128M GDDR SDRAM
tRP
tRP
tRP
5
4
4
4
4
4
3tCK
Min
+tIS
200
7.8
12
14
8
4
2
4
3
3
3
2
1
2
7
-50
tRRD
tRRD
tRRD
Rev. 1.2 (Jan. 2004)
3
3
3
3
3
3
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(Unit : Number of Clock)
tDAL
tDAL
tDAL
9
7
7
7
7
7
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
us
Note
Unit
tCK
tCK
Unit
tCK
tCK
tCK
Unit
tCK
1
1
1