k4h510438 Samsung Semiconductor, Inc., k4h510438 Datasheet - Page 14

no-image

k4h510438

Manufacturer Part Number
k4h510438
Description
Ddr Sdram 512mb B-die X4, X8, X16
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
k4h510438B-GCB3
Manufacturer:
SAMSUNG
Quantity:
12 606
Part Number:
k4h510438B-TCB0
Manufacturer:
SAMSUNG
Quantity:
4 000
Part Number:
k4h510438B-TCB0
Manufacturer:
TI
Quantity:
32
Part Number:
k4h510438B-TCB3
Quantity:
1 955
Part Number:
k4h510438B-TCBO
Manufacturer:
TI
Quantity:
29
Part Number:
k4h510438C-UCB3
Manufacturer:
Samsung
Quantity:
12 611
Part Number:
k4h510438C-ZCB0
Manufacturer:
SAMSUNG
Quantity:
12 616
Part Number:
k4h510438C-ZCB3
Manufacturer:
SAMSUNG
Quantity:
12 621
DDR SDRAM 512Mb B-die (x4, x8, x16)
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Parameter
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Rev. 1.2 October, 2004
DDR333
TBD
TBD
TBD
TBD
Specification
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V

Related parts for k4h510438