k4s513233f Samsung Semiconductor, Inc., k4s513233f Datasheet - Page 10

• Manufacturer Part Number: k4s513233f
• Description: Mobile Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4S513233F - M(E)C/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
3. Full Page Length : x32 : 64Mb(256) , 128Mb (256), 256Mb (512), 512Mb (512)
Function
Function
A8
A9
Address
BA1
A12~A10/AP
0
0
1
1
0
1
Address
0
0
1
1
Write Burst Length
A7
0
0
1
0
1
BA0
Test Mode
0
1
0
1
Mode Register Set
BA1
Single Bit
Mode Select
Length
"0" Setting for
Normal MRS
Burst
BA0 ~ BA1
Reserved
Reserved
Reserved
Mode Select
Type
EMRS for Mobile SDRAM
A9
0
BA0
Normal MRS
Reserved
Reserved
Mode
Reserved Address
A12 ~ A10/AP
A8
A6
0
0
0
0
0
1
1
1
1
A12 ~ A10/AP
RFU
A5
0
0
1
1
0
0
1
1
CAS Latency
*1
A7
A4
0
0
1
0
1
0
1
0
1
RFU
A6
A9
0
0
1
1
*1
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
W.B.L
A9
A5
0
1
0
1
Driver Strengt
1
2
3
*2
A8
A4
0
Driver Strength
A8
Test Mode
BA1 BA0
A3
Reserved
Reserved
0
1
0
A7
10
Full
1/2
Mode Select
Burst Type
A7
A3
0
0
Sequential
Interleave
A6
Type
mal MRS
for Nor-
Setting
A6
DS
Mode
CAS Latency
A2
0
0
0
0
1
1
1
1
A5
A5
A1
A2
0
0
1
1
0
0
1
1
0
0
0
0
1
1
1
1
A4
RFU
A4
A0
A1
0
1
0
1
0
1
0
1
0
0
1
1
0
0
1
1
*1
A3
Mobile SDRAM
A0
A3
BT
Burst Length
PASR
0
1
0
1
0
1
0
1
Size of Refreshed Array
Full Page
1/2 of Full Array
1/4 of Full Array
Reserved
Reserved
Reserved
A2
BT=0
A2
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
4
8
September 2004
Burst Length
PASR
*3
A1
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0