mt16htf25664hy-80e Micron Semiconductor Products, mt16htf25664hy-80e Datasheet

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mt16htf25664hy-80e

Manufacturer Part Number
mt16htf25664hy-80e
Description
1gb, 2gb X64, Dr 200-pin Ddr2 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 SDRAM SODIMM
MT16HTF12864H – 1GB
MT16HTF25664H – 2GB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small outline dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 1GB (128 Meg x 64), 2GB (256 Meg x 64)
• V
• V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Table 1:
PDF: 09005aef818e4054/Source: 09005aef818e40d2
HTF16C128_256x64H.fm - Rev. C 6/07 EN
(SODIMM)
PC2-5300, or PC2-6400.
operation
DD
DDSPD
Speed
Grade
-80E
-800
-667
-53E
-40E
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
t
CK
Data Rate (MT/s)
CL = 5
800
667
667
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
www.micron.com
CL = 4
1
533
533
533
533
400
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Commercial (0°C ≤ T
• Industrial (–40°C ≤ T
• Package
• Frequency/CAS latency
• PCB height
PCB height: 30mm (1.18in)
– 200-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 30mm (1.18in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 3
2. Not recommended for new designs.
400
400
400
module offerings.
200-Pin SODIMM (MO-224 R/C E)
t
(ns)
12.5
RCD
15
15
15
15
C
C
≤ +85°C)
≤ +70°C)
1
©2004 Micron Technology, Inc. All rights reserved.
2
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-53E
-40E
-800
-667
Y
(ns)
I
t
55
55
55
55
55
RC

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mt16htf25664hy-80e Summary of contents

Page 1

... MT16HTF12864H – 1GB MT16HTF25664H – 2GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400. • 1GB (128 Meg x 64), 2GB (256 Meg x 64) • ...

Page 2

... MT16HTF12864HY-53E__ MT16HTF12864HY-40E__ Table 4: Part Numbers and Timing Parameters – 2GB Modules Base device: MT47H128M8, 2 Part Number MT16HTF25664HY-80E__ MT16HTF25664HY-800__ MT16HTF25664HY-667__ MT16HTF25664HY-53E__ MT16HTF25664HY-40E__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web 2. All part numbers end with a two-place code (not shown) designating component and PCB revisions ...

Page 3

... A3 149 Notes: 1. Pin for 1GB and BA2 for 2GB. PDF: 09005aef818e4054/Source: 09005aef818e40d2 HTF16C128_256x64H.fm - Rev. C 6/07 EN 1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Module Pin Assignments and Descriptions Pin Symbol Pin Symbol Pin Symbol Pin Symbol A1 151 DQ42 153 ...

Page 4

... Edge-aligned with read data, center-aligned with write data. DQS# is only used when differential data strobe mode is enabled via the LOAD MODE command. SDA I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data (SSTL_18) into and out of the presence-detect portion of the module. V Supply Power supply: +1.8V ±0.1V Supply SSTL_18 reference voltage ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DM CS# DQS DQS# DQ0 DQ DQ1 DQ DQ2 DQ U2 DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1# DQS1 DM1 DM CS# DQS ...

Page 6

... DDR2 SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 7

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 8

... HIGH HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks in I (CKE LOW) mode. 2. Value calculated reflects all module ranks in this operating condition. ...

Page 9

... HIGH HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks in I (CKE LOW) mode. 2. Value calculated reflects all module ranks in this operating condition. ...

Page 10

Serial Presence-Detect Table 11: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...

Page 11

... Number of SPD bytes used by Micron 1 Total Number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on assembly 4 Number of column addresses on assembly 5 DIMM height and module ranks 6 Module data width 7 Reserved 8 Module voltage interface levels t 9 SDRAM cycle time, CK (CL = maximum value, ...

Page 12

... MIN row precharge time, 28 MIN row active-to-row active, 29 MIN RAS#-to-CAS# delay, 30 MIN active-to-active precharge time, 31 Module rank density 32 Address and command setup time, 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time, ...

Page 13

... Byte Description 63 Checksum for bytes 0–62 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 Module part number (ASCII) 91 PCB identification code 92 Identification code (continued) 93 Year of manufacture in BCD 94 Week of manufacture in BCD 95–98 Module serial number 99–127 Reserved for manufacturer-specific data 128– ...

Page 14

... U16 U17 U18 4.2 (0.165) TYP 47.4 (1.87) 11.4 (0.45) TYP ® their respective owners. Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 Module Dimensions 3.80 (0.150) 30.15 (1.187) 29.85 (1.175) 20.0 (0.787) TYP 1.10 (0.043) Pin 199 0.90 (0.035) Pin 2 TYP ©2004 Micron Technology, Inc. All rights reserved. ...

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