mt2ldt432h Micron Semiconductor Products, mt2ldt432h Datasheet - Page 9

• Manufacturer Part Number: mt2ldt432h
• Description: Small-outline Dram Module Technology
• Manufacturer: Micron Semiconductor Products

FAST PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12, 19) (V
4, 8 Meg x 32 DRAM SODIMMs
DM89.p65 – Rev. 12/98
AC CHARACTERISTICS - FAST PAGE MODE OPTION
PARAMETER
Row-address hold time
RAS# pulse width
RAS# pulse width (Self Refresh)
RAS# pulse width (FAST PAGE MODE)
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (4,096 cycles)
Refresh period “S” version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time (Self Refresh)
READ command hold time (referenced to RAS#)
RAS# hold time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
DD
= +3.3V ±0.3V)
SYMBOL
t
t
t
t
t
t
t
t
t
RASS
t
t
RASP
t
t
t
t
t
t
t
t
WCH
WRH
RWL
WCR
WCS
t
WRP
RAH
RPS
RAS
RCD
RCH
RRH
RSH
t
RCS
REF
REF
t
RPC
WP
RC
RP
t
T
9
MIN
100
50
50
90
18
30
90
13
13
40
10
10
8
0
0
0
0
2
8
0
8
-5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
125,000
10,000
MAX
128
64
50
MIN
100
110
105
10
60
60
20
40
15
15
10
45
10
10
10
0
0
0
0
2
0
DRAM SODIMMs
-6
125,000
10,000
MAX
4, 8 MEG x 32
128
64
50
UNITS
ms
ms
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
©1998, Micron Technology, Inc.
ADVANCE
NOTES
25
14
16
25
25
16