bts282zsmd Infineon Technologies Corporation, bts282zsmd Datasheet - Page 3

• Manufacturer Part Number: bts282zsmd
• Description: Tempfet ? Speed Tempfet
• Manufacturer: Infineon Technologies Corporation

Thermal Characteristics
Parameter
Characteristics
junction - case:
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm
Electrical Characteristics
Parameter
at T
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
V
Gate-source leakage current
V
V
Drain-Source on-state resistance
V
V
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain
D
connection. PCB mounted vertical without blown air.
GS
DS
DS
DS
GS
GS
GS
GS
= 240 µA
j
= 45 V, V
= 45 V, V
= 45 V, V
= 25°C, unless otherwise specified
= 0 V, I
= 20 V, V
= 20 V, V
= 4.5 V, I
= 10 V, I
D
D
D
= 0.25 mA
GS
GS
GS
DS
DS
= 36 A
= 36 A
= 0 V, T
= 0 V, T
= 0 V, T
= 0 V, T
= 0 V, T
GS
j
j
j
j
j
= -40 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
2
= V
cooling area
DS
1)
3
Symbol
R
R
R
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
th(JA)
th(JA)
min.
min.
1.2
49
-
-
-
-
-
-
-
-
-
-
Values
Values
typ.
typ.
1.6
0.1
8.2
5.8
10
20
33
-
-
-
-
-
max.
max.
BTS 282 Z
100
100
100
9.5
6.5
0.5
0.1
62
40
2
1
-
2000-09-11
Unit
V
µA
nA
m
Unit
K/W