hx6136 Honeywell International's Solid State Electronics Center (SSEC), hx6136 Datasheet - Page 12

• Manufacturer Part Number: hx6136
• Description: First-in First-out Memory
• Manufacturer: Honeywell International's Solid State Electronics Center (SSEC)

FIFO – HX6409/HX6218/HX6136
QUALITY AND RADIATION HARDNESS
ASSURANCE
Honeywell maintains a high level of product integrity
through process control, utilizing statistical process
control, a complete “Total Quality Assurance System,”
a computer database process performance tracking
system and a radiation hardness assurance strategy.
The radiation hardness assurance strategy starts with a
technology that is resistant to the effects of radiation.
Radiation hardness is assured on every wafer by
irradiating test structures as well as SRAM product, and
then monitoring key parameters, which are sensitive to
ionizing radiation. Conventional MIL-STD-883 TM 5005
Group E testing, which includes total dose exposure
with Cobalt 60, may also be performed as required.
This Total Quality approach ensures our customers of a
reliable product by engineering in reliability, starting
with process development and continuing through
product qualification and screening.
SCREENING LEVELS
Honeywell offers several levels of device screening to
meet your system needs. “Engineering Devices” are
available with limited performance and screening for
breadboarding and/or evaluation testing. Hi-Rel Level B
Pin List for HX6409
12
Pin
1
2
3
4
5
6
Signal
VSS
Q0
Q1
Q2
Q3
Q4
Pin
10
11
12
7
8
9
EF _Fault
Signal
Q5
Q6
Q7
Q8
OE
Pin
13
14
15
16
17
18
QF / TQF
Signal
E / F
VDD
CKR
VSS
HF
and S devices undergo additional screening per the
requirements of MIL-STD-883.
RELIABILITY
Honeywell
requirements for space and defense systems and has
extensive experience in reliability testing on programs
of this nature. This experience is derived from
comprehensive testing of VLSI processes. Reliability
attributes of the RICMOS
by testing specially designed irradiated and non-
irradiated test structures from which specific failure
mechanisms
mechanisms included, but were not limited to, hot
carriers, electromigration and time dependent dielectric
breakdown. This data was then used to make changes
to the design models and process to ensure more
reliable products.
In addition, the reliability of the RICMOS™ process and
product in a military environment was monitored by
testing
accelerated dynamic life test conditions. Packages are
qualified for product use after undergoing Group B & D
testing as outlined in MIL-STD-883, TM 5005, Class S.
The product is qualified by following a screening and
testing flow to meet the customer’s requirements.
Quality conformance testing is performed as an option
on all production lots to ensure the ongoing reliability of
the product.
Pin
19
20
21
22
23
24
Signal
ENW
CKW
ENR
MR
D8
D7
irradiated
understands
were
Pin
25
26
27
28
29
30
and
Signal
evaluated.
D6
D5
D4
D3
D2
D1
TM
www.honeywell.com/radhard
non-irradiated
process were characterized
the
Pin
31
32
stringent
These
Signal
VDD
D0
circuits
reliability
specific
in