k4m51323pc Samsung Semiconductor, Inc., k4m51323pc Datasheet - Page 11

• Manufacturer Part Number: k4m51323pc
• Description: 4m X 32bit X 4 Banks Mobile Sdram In 90fbga
• Manufacturer: Samsung Semiconductor, Inc.

Partial Array Self Refresh
1. In order to save power consumption, Mobile SDRAM has PASR option.
2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : Full array, 1/2 of full array, 1/4 of full array
Temperature Compensated Self Refresh
B. POWER UP SEQUENCE
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
For operating with DS or PASR, set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not
needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
K4M51323PC-S(D)E/G/C/F
Note :
1. In order to save power consumption, Mobile-SDRAM includes the internal temperature sensor and control units to control the
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
3. It has +/- 5 °C tolerance.
- Apply VDD before or at the same time as VDDQ.
self refresh cycle automatically according to the two temperature range ; 45 °C and 85 °C(for Extended) / 70 °C(for Commercial).
Temperature Range
85/70 °C
45 °C
BA1=0
BA0=0
BA1=1
BA0=0
- Full Array
*3
BA1=0
BA0=1
BA1=1
BA0=1
Full Array
300
600
1/2 Array
- E / C
270
500
BA1=0
BA0=0
BA1=1
BA0=0
- 1/2 Array
Self Refresh Current (IDD6)
1/4 Array
255
450
BA1=1
BA0=1
BA1=0
BA0=1
Full Array
250
500
1/2 Array
- G / F
220
400
BA1=0
BA0=0
BA1=1
BA0=0
- 1/4 Array
Mobile-SDRAM
1/4 Array
Partial Self Refresh Area
205
350
BA1=0
BA0=1
BA1=1
BA0=1
February 2006
Unit
uA