k4h280438d Samsung Semiconductor, Inc., k4h280438d Datasheet - Page 29

• Manufacturer Part Number: k4h280438d
• Description: 128mb D-die X4/8 Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

*1
128Mb D-die(x4/8) DDR SDRAM
Burst length = 4
*2
READ+AP
Precharge
command
3.3.12 Write with Auto Precharge
command to the same bank should not be issued until the internal precharge is completed. The internal pre-
charge begins after keeping tWR(min).
Asserted
WRITE+
: AP = Auto Precharge
: DM : Refer to " 3.3.7 Write Interrupted by a Read & DM " in page 25.
WRITE
READ
If A10 is high when write command is issued , the write with auto-precharge function is performed. Any new
Active
Command
AP
<100Mhz, Burst Length=4 >
CK
CK
D Q S
D Q s
ACTIVE
BANK A
WRITE+
No AP
WRITE+
Illegal
Illegal
Illegal
Illegal
AP
3
0
*1
NOP
READ+NO
AP+DM
WRITE+
WRITE+
READ +
AP+DM
No AP
Illegal
Illegal
1
AP
4
Auto Precharge
Table 7. Operating description when new command asserted
WRITE A
*2
Figure 20. Write with auto precharge timing
2
READ+NO
For same Bank
READ +
AP+DM
AP+DM
Illegal
Illegal
Illegal
Illegal
while write with auto precharge is issued
5
Din 0
NOP
3
Din 1 Din 2
READ +
READ+
- 29 -
NO AP
Illegal
Illegal
Illegal
Illegal
AP
6
NOP
4
Din 3
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
NOP
7
5
Internal precharge start
t
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
WR
NOP
8
6
REV. 0.3 Jan.31. 2001
Illegal
Illegal
t
Legal
Legal
Legal
Legal
DAL
3
NOP
* Bank can be reactivated at
completion of
7
Illegal
Illegal
Legal
Legal
Legal
Legal
For Different Bank
4
NOP
t
RP
t
RP
8
Illegal
Illegal
Legal
Legal
Legal
Legal
5
NOP
Legal
Legal
Legal
Legal
Legal
Legal
6
Legal
Legal
Legal
Legal
Legal
Legal
7