mgfs45v2527a Mitsumi Electronics, Corp., mgfs45v2527a Datasheet

mgfs45v2527a

Manufacturer Part Number

mgfs45v2527a

Description

2.5 - 2.7ghz Band 32w Internally Matched Gaas Fet

Manufacturer

Mitsumi Electronics, Corp.

Datasheet

1.MGFS45V2527A.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MGFS45V2527A

Manufacturer:

MITSUBISHI

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

mgfs45v2527a-53

Quantity:

1 400

Current page: 1 of 3
Download datasheet (240Kb)

The MGFS45V2527 is an internally impedance-matched

GaAs power FET especially designed for use in 2.5 - 2.7

GHz band amplifiers.The hermetically sealed metal-ceramic

package guarantees high reliability.

item 01 : 2.5 - 2.7 GHz band power amplifier

item 51 : 2.5 - 2.7 GHz band digital radio communication

*1 : Tc=25deg.C

*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.5,2.6,2.7GHz,dfelta f=5MHz

*3 : Channel-case

DESCRIPTION

FEATURES

Class A operation

Internally matched to 50(ohm) system

High output power

High power gain

High power added efficiency

Low distortion [item -51]

APPLICATION

QUALITY GRADE

RECOMMENDED BIAS CONDITIONS

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CARACTERISTICS

Rth(ch-c) *3

VGS(off)

IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.

Symbol

PT *1

IM3 *2

VGDO

VGSO

P.A.E.

P1dB

Tstg

IGR

GLP

IGF

Tch

P1dB = 32W (TYP.)

GLP = 12 dB (TYP.)

P.A.E. = 45 % (TYP.)

VDS = 10 (V)

ID = 6.5 (A)

RG=25 (ohm)

Gate to drain voltage

Gate to source voltage

Drain current

Reverse gate current

Forward gate current

Total power dissipation

Channel temperature

Storage temperature

Output power at 1dB gain

Saturated drain current

Power added efficiency

3rd order IM distortion

Thermal resistance

Linear power gain

Drain current

compression

Parameter

f=2.5 - 2.7 GHz

f=2.5 - 2.7GHz

delta Vf method

-65 / +175

VDS = 3V , ID = 60mA

VDS=10V, ID(RF off)=6.5A, f=2.5 - 2.7GHz

Ratings

2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET

175

-15

-61

Test conditions

(Ta=25deg.C)

MITSUBISHI

ELECTRIC

deg.C

Unit

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur

with them.Trouble with semiconductors may lead to personal

injury, fire or property damage. Remember to give due

consideration to safety when making your circuit designs,

with appropriate measures such as (1)placement of

substitutive, auxiliary circuits, (2)use of non-flammable

material or (3)prevention against any malfunction or mishap.

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFS45V2527A

< Keep safety first in your circuit designs! >

Min.

-42

Typ.

Limits

7.5

-45

Max.

1.5

-5

Unit

June-'04

deg.C/W

dBm

dBc

Related parts for mgfs45v2527a

mgfs45v2527a Summary of contents

Page 1

... Test conditions VDS = 60mA VDS=10V, ID(RF off)=6.5A, f=2.5 - 2.7GHz delta Vf method MITSUBISHI ELECTRIC MGFS45V2527A < Keep safety first in your circuit designs! > Limits Unit Min. Typ. Max ...

... MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET Po , P.A.E. vs. Pin 50 16 VDS=10 (V) IDS=6.5(A) 45 f=2.6 (GHz 2.7 2.75 INPUT POWER (dBm -10 -20 -30 -40 -50 ...

Page 3

... MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527A 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June-'04 ...

Related keywords

mgfs45v2527a datasheet
mgfs45v2527a data sheet
mgfs45v2527a pdf datasheet
mgfs45v2527a component
mgfs45v2527a part
mgfs45v2527a distributor
mgfs45v2527a RoHS
mgfs45v2527a datasheet download

mgfs45v2527a Mitsumi Electronics, Corp., mgfs45v2527a Datasheet

mgfs45v2527a

Available stocks

Related parts for mgfs45v2527a

mgfs45v2527a Summary of contents

Page 1

Page 2

Page 3

Related keywords