ne8500100 California Eastern Laboratories, ne8500100 Datasheet
ne8500100
Manufacturer Part Number
ne8500100
Description
C-band Medium Power Gaas Mesfet
Manufacturer
California Eastern Laboratories
Datasheet
1.NE8500100.pdf
(4 pages)
The NE8500199 is a medium power GaAs MESFET designed
for up to a 1W output stage or as a driver for higher power
devices. The device has no internal matching and can be
used at frequencies from UHF to 8.5 GH
available in the “99” package or in chip form. The chip is a two-
cell die; bonding both cells delivers the rated performance.
The NE850 Series Transistors are manufactured to NEC's
stringent quality assurance standards to ensure highest reli-
ability and consistent superior performance.
ELECTRICAL CHARACTERISTICS
FEATURES
• HIGH OUTPUT POWER: 1 W
• HIGH LINEAR GAIN: 9.0 dB
• HIGH EFFICIENCY: 37% (PAE)
• INDUSTRY STANDARD PACKAGING
• THIS DEVICE IS ALSO AVAILABLE AS A
DESCRIPTION
TWO-CELL CHIP: NE8500100
SYMBOLS
P
I
R
I
DSS
G
V
g
OUT
ADD
DS
C-BAND MEDIUM POWER GaAs MESFET
TH
m
P
L
Power Out at Fixed Input Power
Linear Gain
Collector Efficiency
Drain Source Current
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
CHARACTERISTICS
PACKAGE OUTLINE
PART NUMBER
Z
. The device is
(T
C
= 25 C)
UNITS
dBm
mS
C/W
mA
mA
dB
%
V
Note:
1. Operation in excess of any one of these parameters may result in
RECOMMENDED OPERATING LIMITS
ABSOLUTE MAXIMUM RATINGS
(T
SYMBOLS
SYMBOLS
G
C
permanent damage.
T
V
T
= 25 C unless otherwise noted)
V
COMP
V
V
R
I
T
I
P
STG
GS
DS
CH
GD
DS
DS
GS
CH
G
T
MIN
28.5
-3.0
330
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
California Eastern Laboratories
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
00 (Chip), 99
NE8500199
NE8500100
PARAMETERS
TYP
29.5
200
300
9.0
PARAMETERS
37
MAX
825
-1.0
60
NE8500100
NE8500199
V
UNITS MIN
DS
V
K
V
V
dB
V
DS
UNITS
TEST CONDITIONS
C
DS
DS
= 10 V; I
mA
Channel to Case
W
V
V
V
A
P
= 2.5 V; I
C
C
= 2.5 V; V
= 2.5 V; I
IN
f = 7.2 GHz
R
= 21.0 dBm
9
G
= 1K
1
-65 to +175
DSQ
RATINGS
TYP MAX
DS
IDSS
DS
175
1
GS
-18
-12
6.0
6.0
15
= 200 mA
= 4 mA
= I
= 0 V
DSS
130
3.0
10
4
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ne8500100 Summary of contents
Page 1
... HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUSTRY STANDARD PACKAGING • THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 DESCRIPTION The NE8500199 is a medium power GaAs MESFET designed for output stage driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GH available in the “ ...
Page 2
TYPICAL SCATTERING PARAMETERS 10.1 GHz 10.1 GHz 0.1 GHz - 8500100 (2 Cells 200 mA ...
Page 3
TYPICAL SCATTERING PARAMETERS 10.1 GHz 10.1 GHz S 0.1 GHz 8500100 (1 Cell 100 mA DS ...
Page 4
... MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM ...