tpcp8503 TOSHIBA Semiconductor CORPORATION, tpcp8503 Datasheet - Page 3

• Manufacturer Part Number: tpcp8503
• Description: Toshiba Transistor Silicon Npn Triple Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.03
0.01
0.03
0.01
100
100
0.3
0.1
0.3
0.1
80
60
40
20
10
30
10
0
3
1
0.1
3
1
0.1
0
Common emitter
Common emitter
Collector-emitter voltage V
I C /I B = 40
Ta = 100°C
I C /I B = 5
0.3
0.3
Collector current I
Collector current I
2
1
1
5
V
V
25
4
CE (sat)
CE (sat)
I
C
– V
3
3
−55
4
CE
– I
– I
6
C
Ta = 100°C
C
C
C
Common emitter
Ta = 25°C
10
10
(
(
CE
mA
mA
−55
I B = 0.1 mA
3
8
)
)
30
30
25
(V)
0.5
0.2
2
1
100
100
10
3
1000
0.03
0.01
0.03
0.01
300
100
0.3
0.1
0.3
0.1
30
10
10
10
3
1
0.1
3
1
0.1
3
1
0.1
Common emitter
Common emitter
Common emitter
Ta = −55°C
100
Ta = −55°C
100
V CE = 5 V
I C /I B = 40
I C /I B = 5
0.3
0.3
0.3
Collector current I
Collector current I
Collector current I
25
25
1
1
1
Ta = −55°C
V
V
100
25
BE (sat)
BE (sat)
h
FE
3
3
3
– I
– I
– I
C
C
C
C
C
C
10
10
10
(
(
(
mA
mA
mA
)
)
)
30
30
30
TPCP8503
2006-11-16
100
100
100