sia425edj Vishay, sia425edj Datasheet

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sia425edj

Manufacturer Part Number
sia425edj
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
sia425edj-T1-GE3
Manufacturer:
VISHAY
Quantity:
4 144
Company:
Part Number:
sia425edj-T1-GE3
Quantity:
70 000
Document Number: 65575
S09-2268-Rev. A, 02-Nov-09
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 20
2.05 mm
6
(V)
PowerPAK SC-70-6L-Single
D
5
D
4
0.060 at V
0.065 at V
0.080 at V
0.120 at V
S
D
R
1
S
DS(on)
D
2.05 mm
2
GS
GS
GS
GS
G
(Ω)
= - 4.5 V
= - 3.6 V
= - 2.5 V
= - 1.8 V
J
3
= 150 °C)
b, f
Ordering Information: SiA425EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel 20-V (D-S) MOSFET
I
- 4.5
- 4.5
- 4.5
D
- 2
(A)
a
a
a
d, e
Part # code
A
= 25 °C, unless otherwise noted
Q
Steady State
4.9 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Marking Code
B M X
X X X
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced PowerPAK
• Typical ESD Protection 2400 V
• 100 % R
• Load Switch and Battery Switch
Lot Traceability
and Date code
Symbol
Symbol
T
R
R
Definition
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Compliant to RoHS Directive 2002/95/EC
for Portable Devices
J
V
V
I
P
, T
DM
I
I
thJC
thJA
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
32
6
- 55 to 150
- 4.5
- 4.5
- 2.4
2.9
1.8
Limit
- 4.5
- 4.5
- 4.5
± 12
15.6
- 20
- 15
260
10
a, b, c
a, b, c
b, c
b, c
b, c
a
a
a
Maximum
G
43
Vishay Siliconix
8
SiA425EDJ
®
R
www.vishay.com
P-Channel MOSFET
°C/W
Unit
Unit
°C
W
V
A
S
D
1

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sia425edj Summary of contents

Page 1

... 2. 2. Ordering Information: SiA425EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiA425EDJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Gate Resistance Turn-On Delay Time ...

Page 3

... 1 2.0 2.5 3.0 1.5 1.4 1.3 1.2 = 2 4.5 V 0.9 GS 0.8 0 SiA425EDJ Vishay Siliconix - 150 ° ° Gate-to-Source Voltage (V) GS Gate Current vs. Gate-to-Source Voltage ° 125 ° ...

Page 4

... SiA425EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.9 0 250 µA D 0.7 0.6 0.5 0.4 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.15 0.12 0.09 0. °C J 0.03 0.00 0.8 1.0 1.2 75 100 125 150 100 Limited ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65575 S09-2268-Rev. A, 02-Nov-09 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiA425EDJ Vishay Siliconix ...

Page 6

... SiA425EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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