sia443dj Vishay, sia443dj Datasheet - Page 4

• Manufacturer Part Number: sia443dj
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiA443DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.9
0.8
0.7
0.6
0.5
0.4
0.3
100
0.1
10
- 50
1
0.0
Soure-Drain Diode Forward Voltage
- 25
0.2
I
D
V
= 250 µA
SD
0
T
J
- Source-to-Drain Voltage (V)
= 150 °C
T
Threshold Voltage
0.4
J
25
- Temperature (°C)
0.6
50
75
0.8
0.01
100
T
100
0.1
10
J
1
0.1
= 25 °C
1.0
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
125
Single Pulse
T
GS
A
= 25 °C
150
1.2
V
New Product
minimum V
DS
DS(on)*
- Drain-to-Source Voltage (V)
1
GS
at which R
BVDSS
0.12
0.10
0.08
0.06
0.04
0.02
10
DS(on)
30
25
20
15
10
5
0
0.001
0
is specified
100 µs
10 ms
100 ms
1 s
10 s
On-Resistance vs. Gate-to-Source Voltage
1 ms
DC
Single Pulse Power, Junction-to-Ambient
0.01
1
V
100
GS
0.1
- Gate-to-Source Voltage (V)
2
25 °C
Time (s)
1
S-80435-Rev. B, 03-Mar-08
Document Number: 74474
3
10
I
D
4
100
= 4.7 A
1000
5