tpc8058-h TOSHIBA Semiconductor CORPORATION, tpc8058-h Datasheet - Page 2

• Manufacturer Part Number: tpc8058-h
• Description: Mosfets Silicon N-channel Mos U-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

5. 5. 5. 5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: V
Note:
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
Fig.
Fig.
Fig.
Fig. 5.1
This transistor is sensitive to electrostatic discharge and should be handled with care.
5.1
5.1
5.1 Device Mounted on a Glass-Epoxy
DD
= 24 V, T
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
ch
Board (a)
Board (a)
Board (a)
Board (a)
= 25 (initial), L = 1.0 mH, R
Characteristics
G
(t = 10 s)
(t = 10 s)
2
= 1 Ω, I
Fig.
Fig.
Fig.
Fig. 5.2
AR
= 18 A
5.2
5.2
5.2 Device Mounted on a Glass-Epoxy
(Note 2)
(Note 3)
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Board (b)
Board (b)
Board (b)
Board (b)
Symbol
R
R
th(ch-a)
th(ch-a)
TPC8058-H
65.7
Max
125
2010-07-29
Rev.1.0
/W
/W
Unit