tpc8086 TOSHIBA Semiconductor CORPORATION, tpc8086 Datasheet - Page 3

• Manufacturer Part Number: tpc8086
• Description: Mosfets Silicon N-channel Mos U-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

6. 6. 6. 6. Electrical Characteristics (T
6.1.
6.1.
6.2.
6.2.
6.3.
6.3.
6.4.
6.4.
6.1.
6.1. Static Characteristics
6.2.
6.2. Dynamic Characteristics
6.3.
6.3. Gate Charge Characteristics
6.4.
6.4. Source-Drain Characteristics
Electrical Characteristics (T
Electrical Characteristics (T
Electrical Characteristics (T
Note 5: Ensure that the channel temperature does not exceed 150.
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Pulsed reverse drain current
Diode forward voltage
Static Characteristics
Static Characteristics
Dynamic Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Gate Charge Characteristics
Source-Drain Characteristics
Source-Drain Characteristics
Static Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Source-Drain Characteristics
Characteristics
Characteristics
Characteristics
Characteristics
(Note 5)
a a a a
Fig.
Fig.
Fig.
Fig. 6.2.1
= 25    unless otherwise specified)
= 25
= 25
= 25
V
V
R
Symbol
Symbol
Symbol
(BR)DSS
(BR)DSX
Q
I
I
DS(ON)
C
C
6.2.1
6.2.1
C
6.2.1 Switching Time Test Circuit
Q
GSS
DSS
V
t
t
Q
on
off
oss
t
t
gs1
rss
iss
gd
th
r
f
Symbol
g
V
I
DRP
DSF
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
V
V
I
I
V
V
V
V
See Figure 6.2.1.
Switching Time Test Circuit
V
Switching Time Test Circuit
Switching Time Test Circuit
D
D
GS
DS
DS
GS
GS
DS
DD
= 10 mA, V
= 10 mA, V

I
= 30 V, V
= 10 V, I
= 10 V, V
DR
= ±16 V, V
= 4.5 V, I
= 10 V, I
3
24 V, V
= 17 A, V
Test Condition
Test Condition
Test Condition
D
D
GS
GS
D
Test Condition
GS
GS
GS
= 0.2 mA
= 8.5 A
DS
= 8.5 A
= 0 V
= -20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
GS
= 0 V
= 0 V
D
= 17 A
Min
Min
Min
Min
1.3
30
15
















1900
Typ.
Typ.
Typ.
Typ.
330
6.6
5.0
3.2
8.0
5.8
2.9
90
10
42
26







2010-07-16
TPC8086
Max
Max
Max
Max
-1.2
±10
2.3
8.5
6.4
10












68
Rev.1.0
Unit
Unit
Unit
Unit
mΩ
µA
nC
pF
ns
V
A
V