tpc8a03-h TOSHIBA Semiconductor CORPORATION, tpc8a03-h Datasheet

tpc8a03-h

Manufacturer Part Number

tpc8a03-h

Description

Silicon N-channel Mos Type U-mos V-h

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TPC8A03-H.pdf (8 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

TPC8A03-H

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

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High Efficiency DC-DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Built-in schottky barrier diode

Low forward voltage: V

High-speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

(Tc=25℃) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

DSS

DSF

= 8.4 nC (typ.)

(Note 2a)

(Note 2b)

= 1.3 to 2.3 V (V

(t = 10 s)

(Note 1)

(Note 3)

= 100 μA (max) (V

= 0.6 V(max)

Silicon N-Channel MOS Type (U-MOS V-H)

DS (ON)

(Ta = 25°C)

TPC8A03-H

Symbol

DGR

GSS

DSS

| = 54 S (typ.)

stg

= 4.1 mΩ (typ.)

= 10 V, I

= 30 V)

−55 to 150

Rating

0.108

±20

188

150

1.9

1.0

= 1 mA)

Unit

°C

Weight: 0.085g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

TPC8A03-H

2-6J1B

2008-08-22

⎯

Unit: mm

Related parts for tpc8a03-h

tpc8a03-h Summary of contents

Page 1

... DGR ± GSS 1 1 188 0.108 150 °C ch −55 to 150 T °C stg 1 TPC8A03-H Unit: mm ⎯ JEDEC ⎯ JEITA TOSHIBA 2-6J1B Weight: 0.085g (typ.) Circuit Configuration 2008-08-22 ...

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC8A03-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2008-08-22 ...

Page 3

... (Ta = 25°C) Symbol Test Condition ⎯ DSF = TPC8A03-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 100 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.3 2.3 ⎯ 5.1 7.0 ⎯ 4.1 5.6 ⎯ ...

Page 4

... Drain-source voltage V 0.20 0.15 0.10 0. (V) Gate-source voltage V 10 Common source Ta = 25°C Pulse test 1 100 0.1 4 TPC8A03-H I – 3.2 3.1 Common source Ta = 25°C Pulse test 3.0 2 – Common source Ta = 25°C Pulse test ...

Page 5

... C rss 0.5 Common source Pulse test 0 −80 −40 100 (V) Ambient temperature Ta (° 160 0 5 TPC8A03-H − 4 Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1.0 (V) DS − ...

Page 6

... Safe operating area 1000 100 I D max (Pulse *Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage – 0.01 0 Pulse width t (s) w 100 (V) 6 TPC8A03-H (2) (1) Single Pulse 100 1000 2008-08-22 ...

Page 7

... Pulse test 140 120 100 Drain-source voltage V ( DSS 100000 Pulse test 10000 1000 100 Channel temperature Tch (° TPC8A03-H – Tch (typ 120 160 2008-08-22 ...

Page 8

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 TPC8A03-H 20070701-EN GENERAL 2008-08-22 ...

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