tpc8a06-h TOSHIBA Semiconductor CORPORATION, tpc8a06-h Datasheet - Page 2

• Manufacturer Part Number: tpc8a06-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
TPC8A06
H
(Note 5)
DD
= 24 V, T
Characteristic
(a)
ch
Part No.
(or abbreviation code)
Lot No.
Note
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
= 25°C (initial), L = 500 μH, R
(Note 2a)
(Note 2b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
R
R
Note : A line under a Lot No. identifies the indication of product Labels
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
Symbol
th (ch-a)
th (ch-a)
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
G
2
= 25 Ω, I
65.8
Max
125
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= 12 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPC8A06-H
2009-06-05