ipb06n03lbg Infineon Technologies Corporation, ipb06n03lbg Datasheet
ipb06n03lbg
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ipb06n03lbg Summary of contents
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OptiMOS ® 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC • N-channel - Logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 ...
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Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Gate resistance Transconductance 2) Current is limited ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter 1000 ...
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Typ. output characteristics I =f =25 ° parameter 100 4 Typ. transfer characteristics I =f(V ...
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Drain-source on-state resistance =10 V DS(on -60 - Typ. Capacitances C ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...
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PG-TO263-3: Outline Rev. 0.93 Packaging: page 8 IPB06N03LB 2006-05-10 ...
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Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...