tpca8019-h TOSHIBA Semiconductor CORPORATION, tpca8019-h Datasheet - Page 6

• Manufacturer Part Number: tpca8019-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
10
3.0
2.5
2.0
1.5
1.0
0.5
1
0.1
0
0
* Single - pulse
Curves must be derated
linearly with increase in
temperature.
I D max (Pulse) *
Ta=25℃
(1)
(2)
Drain-source voltage V
Ambient temperature Ta (
40
1000
0.01
100
Safe operating area
0.1
0.0001
10
1
1
t =10ms*
(1) Device mounted on a glass-epoxy board (a)
(2) Device mounted on a glass-epoxy board (b)
(3) Tc=25℃
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10s
board (a) (Note 2a)
P
(Note 2b)
(Note 2a)
D
80
– Ta
0.001
t =1ms*
V DSS max
10
DS
120
(V)
0.01
°
C)
100
160
Pulse width t
0.1
r
th
6
– t
w
w
1
(s)
50
40
30
20
10
0
0
10
Single - pulse
Case temperature T
40
100
P
D
(2)
(1)
(3)
80
– Tc
1000
C
TPCA8019-H
120
(
°
C)
2007-12-26
160