tpca8045-h TOSHIBA Semiconductor CORPORATION, tpca8045-h Datasheet - Page 3

• Manufacturer Part Number: tpca8045-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
rg
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty ≤ 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
= 46 A, V
(Ta = 25°C)
≈ 32 V, V
= ±20 V, V
= 40 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V, V
≈ 32 V, V
≈ 32 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
GS
GS
GS
GS
= 10 μs
= 1.0 mA
= 23 A
DS
= 23 A
= 23 A
⎯
= 0 V
= 0 V
= −20 V
= 10 V, I
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 5 V, I
= 10 V, I
= 0 V
I
D
V
DD
= 23 A
D
≈ 20 V
D
D
= 46 A
= 46 A
= 46 A
V
OUT
Min
Min
1.3
40
25
68
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5800
Typ.
Typ.
136
305
950
2.9
2.4
1.0
4.6
15
11
67
90
47
16
15
23
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCA8045-H
2009-04-22
±100
7540
−1.2
Max
Max
445
138
2.3
4.1
3.6
1.5
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
ns
Ω
V
V
S
A
V