tpca8060-h TOSHIBA Semiconductor CORPORATION, tpca8060-h Datasheet - Page 5

• Manufacturer Part Number: tpca8060-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
10
30
20
10
8
6
4
2
0
0
−80
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V DS
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (
Total gate charge Q
V GS = 10 V
20
Dynamic input/output
Capacitance – V
1
0
characteristics
R
V DD = 6 V
DS (ON)
I D = 11.3, 22.5, 45 A
40
40
24
– Ta
I D = 11.3, 22.5, 45 A
80
g
DS
10
DS
12
Common source
I D = 45 A
Ta = 25°C
Pulse test
(nC)
60
°
(V)
C)
120
C iss
C oss
C rss
160
100
80
12
8
4
0
5
1000
100
2.5
2.0
1.5
1.0
0.5
10
1
0
−80
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Drain-source voltage V
−40
Ambient temperature Ta (
−0.2
10
0
4.5
−0.4
I
DR
V
th
– V
40
– Ta
3
1
DS
−0.6
80
DS
Common source
Ta = 25°C
Pulse test
TPCA8060-H
−0.8
V GS = 0 V
°
(V)
120
C)
2009-04-27
−1.0
160