tpca8a04-h TOSHIBA Semiconductor CORPORATION, tpca8a04-h Datasheet - Page 5

• Manufacturer Part Number: tpca8a04-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
10
50
40
30
20
10
−80
6
5
4
3
2
1
0
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V DS
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
V GS = 10 V
Total gate charge Q
20
Dynamic input/output
Capacitance − V
0
1
characteristics
R
V DD = 6 V
DS (ON)
I D = 11A,22A,44A
40
40
− Ta
60
24
I D = 11A,22A,44A
80
10
g
DS
DS
Common source
I D = 44 A
Ta = 25°C
Pulse test
12
(nC)
C iss
C rss
80
C oss
(V)
120
160
100
100
20
16
12
8
4
0
5
100
2.5
2.0
1.5
1.0
0.5
10
−80
1
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
4.5
10
−40
Drain-source voltage V
Ambient temperature Ta (°C)
−0.2
3
0
−0.4
I
DR
V
th
− V
40
− Ta
1
DS
−0.6
80
V GS = 0 V
DS
Common source
Ta = 25°C
Pulse test
TPCA8A04-H
−0.8
(V)
120
2008-08-21
−1.0
160