buk962r2-40c NXP Semiconductors, buk962r2-40c Datasheet

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buk962r2-40c

Manufacturer Part Number
buk962r2-40c
Description
N-channel Trenchmos Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
[2]
Symbol
V
I
P
Avalanche ruggedness
E
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
DS(AL)S
GD
DSon
BUK962R2-40C
N-channel TrenchMOS logic level FET
Rev. 02 — 17 April 2008
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
12 V loads
General purpose power switching
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
Parameter
drain-source voltage
drain current
total power dissipation
non-repetitive
drain-source
avalanche energy
gate-drain charge
drain-source on-state
resistance
Quick reference
Conditions
T
V
see
T
I
R
T
V
V
V
T
and
D
j
mb
j(init)
j
GS
GS
DS
GS
GS
≥ 25 °C; T
= 100 A; V
= 25 °C; see
Figure 1
= 25 °C; see
= 32 V; see
13
= 5 V; T
= 5 V; I
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
D
D
j
j
and
sup
= 25 °C;
≤ 175 °C
= 25 A;
= 25 A;
GS
Figure
≤ 40 V;
Figure 14
Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
Automotive systems
Motors, lamps and solenoids
= 5 V;
Figure 2
4
12,
11
[1][2]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
73
2
Max Unit
40
100
333
1.2
-
2.2
V
A
W
J
nC

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buk962r2-40c Summary of contents

Page 1

... BUK962R2-40C N-channel TrenchMOS logic level FET Rev. 02 — 17 April 2008 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... sup °C; unclamped j(init) see Figure ° ≤ 10 μs; pulsed ° Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET Graphic symbol mbb076 2 3 Min Max - -15 15 [1] - 280 ...

Page 3

... (1) ( Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET 03na19 50 100 150 T (° tot = × 100 % P tot ( 25°C ) 003aac266 10 t (ms) AL © NXP B.V. 2008. All rights reserved. 200 ...

Page 4

... Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK962R2-40C_2 Product data sheet Limit DSon DS D (1) 1 Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET 003aac289 = 10 μ 100 μ 100 ms 10 ...

Page 5

... 175 °C; see T Figure 175 ° ° Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET Min Typ Max - 0.45 003aab020 t p δ −2 −1 10 ...

Page 6

... MHz see Figure 15 = 1.2 Ω Ω G(ext) from upper edge of drain mounting base to centre of die from source lead to source bond pad Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET Min Typ Max - 2 100 - 2 100 - - 2.45 - 1.6 1 ...

Page 7

... V ( Fig 9. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET 003aac253 = 175 ° ° ( 25V 03aa33 max typ min 0 60 120 ( ° A;V ...

Page 8

... I ( Fig 13. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET 03aa27 0 60 120 ( ° DSon R DSon ( 25°C ) 003aac286 ( °C; I ...

Page 9

... I S (A) 200 150 = 175 ° 100 25 ° 0.5 1 1.5 Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET 003aac255 C iss C oss C rss ( 003aac261 2 V (V) SD © NXP B.V. 2008. All rights reserved. ...

Page 10

... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2008. All rights reserved. SOT404 ...

Page 11

... BUK962R2-40C_1 20080328 BUK962R2-40C_2 Product data sheet Data sheet status Product data sheet 6: V condition for I corrected. DS DSS product data sheet Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET Change notice Supersedes - BUK962R2-40C_1 - - © NXP B.V. 2008. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 17 April 2008 BUK962R2-40C N-channel TrenchMOS logic level FET © NXP B.V. 2008. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK962R2-40C_2 All rights reserved. Date of release: 17 April 2008 ...

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