buk9226-100b NXP Semiconductors, buk9226-100b Datasheet

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buk9226-100b

Manufacturer Part Number
buk9226-100b
Description
Buk9226-100b Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
2. Pinning information
Table 1:
[1]
Pin
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT428 package.
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Pinning - SOT428 (D-PAK), simplified outline and symbol
M3D300
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very
low on-state resistance.
Product availability:
[1]
BUK9226-100B in SOT428 (D-PAK)
BUK9226-100B
TrenchMOS™ logic level FET
Rev. 01 — 10 December 2002
TrenchMOS
175 C rated
Automotive systems
Motors, lamps and solenoids
E
I
D
Simplified outline
DS(AL)S
48 A
SOT428 (D-PAK)
Top view
1
147 mJ
TM
mb
technology
2
MBK091
3
Q101 compliant
Logic level compatible
12 V, 24 V, and 42 V loads
General purpose power switching
R
P
tot
DSon
150 W
= 22 m (typ)
Symbol
MBB076
g
Objective data
d
s

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buk9226-100b Summary of contents

Page 1

... Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9226-100B in SOT428 (D-PAK) 1.2 Features TrenchMOS 175 C rated 1.3 Applications Automotive systems Motors, lamps and solenoids 1 ...

Page 2

... Figure pulsed unclamped inductive load 100 starting Rev. 01 — 10 December 2002 BUK9226-100B TrenchMOS™ logic level FET Min Max Unit - 100 V - 100 192 A - 150 ...

Page 3

... Fig 2. Continuous drain current as a function of mounting base temperature Rev. 01 — 10 December 2002 BUK9226-100B TrenchMOS™ logic level FET 03nk88 50 100 150 200 03nl46 100 100 (V) © ...

Page 4

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 10803 Objective data Conditions Figure Rev. 01 — 10 December 2002 BUK9226-100B TrenchMOS™ logic level FET Min Typ Max Unit - 71.4 - K/W - 0.45 1.0 ...

Page 5

... Figure /dt = 100 Rev. 01 — 10 December 2002 BUK9226-100B TrenchMOS™ logic level FET Typ Max Unit - - 1 2 500 ...

Page 6

... T j (º Fig 6. Sub-threshold drain current as a function of gate-source voltage. 2 1.5 1 0 120 Rev. 01 — 10 December 2002 BUK9226-100B TrenchMOS™ logic level FET 03ng53 min typ max 0.5 1 1 03ng41 180 T j (ºC) © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...

Page 7

... min. 5.46 0.4 6.22 6.73 4.81 2.285 4.57 4.0 5.26 0.2 5.98 6.47 4.45 REFERENCES JEDEC JEITA TO-252 SC-63 Rev. 01 — 10 December 2002 BUK9226-100B TrenchMOS™ logic level FET min. 10.4 2.95 0.9 0.5 0.2 9.6 2.55 0.5 EUROPEAN ISSUE DATE PROJECTION 99-09-13 01-12-11 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...

Page 8

... Philips Semiconductors 7. Revision history Table 5: Revision history Rev Date CPCN Description 01 20021210 - Objective data (9397 750 10803) 9397 750 10803 Objective data Rev. 01 — 10 December 2002 BUK9226-100B TrenchMOS™ logic level FET © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 9

... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 10 December 2002 Rev. 01 — 10 December 2002 BUK9226-100B BUK9226-100B TrenchMOS™ logic level FET TrenchMOS™ logic level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...

Page 10

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 December 2002 Document order number: 9397 750 10803 BUK9226-100B TrenchMOS™ logic level FET ...

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