buk7514-30 NXP Semiconductors, buk7514-30 Datasheet

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buk7514-30

Manufacturer Part Number
buk7514-30
Description
Trenchmos Transistor Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7514-30
Manufacturer:
PHILIPS
Quantity:
5 000
Part Number:
BUK7514-30
Manufacturer:
NXP
Quantity:
12 500
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
converters and general purpose
switching applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
ESD LIMITING VALUE
September 1997
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
SYMBOL
V
D
D
DM
PIN
V
DS
DGR
tot
stg
C
tab
th j-mb
th j-a
1
2
3
GS
, T
j
gate
drain
source
drain
for
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
use
transistor
in
DC-DC
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
DS
tot
j
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
-
in free air
CONDITIONS
Human body model
(100 pF, 1.5 k )
mb
mb
mb
mb
tab
GS
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
V
GS
= 10 V
SYMBOL
TYP.
MIN.
MIN.
- 55
60
-
-
-
-
-
-
-
-
-
g
Product specification
MAX.
125
175
30
69
14
MAX.
MAX.
MAX.
240
125
175
1.2
30
30
20
69
48
2
-
PHP69N03T
d
s
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
˚C
W
V
A

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buk7514-30 Summary of contents

Page 1

Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up ...

Page 2

Philips Semiconductors TrenchMOS transistor Standard level FET STATIC CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) I Zero gate voltage drain current DSS I Gate source leakage current ...

Page 3

Philips Semiconductors TrenchMOS transistor Standard level FET REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER I Continuous reverse drain DR current I Pulsed reverse drain current DRM V Diode forward voltage SD t ...

Page 4

... Fig.6. Typical on-state resistance Product specification PHP69N03T Zth j-mb / (K/W) BUKx55- 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j-mb p BUK7514- VDS / f(V ); parameter 5.5 6 6.5 VGS / ˚ f(I ); parameter V DS(ON 1E+01 6 ...

Page 5

Philips Semiconductors TrenchMOS transistor Standard level FET 100 VGS / V Fig.7. Typical transfer characteristics f conditions ...

Page 6

Philips Semiconductors TrenchMOS transistor Standard level FET VGS / VDS / Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions ...

Page 7

Philips Semiconductors TrenchMOS transistor Standard level FET MECHANICAL DATA Dimensions in mm Net Mass 3,0 max not tinned max (2x) Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate ...

Page 8

Philips Semiconductors TrenchMOS transistor Standard level FET DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...

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