tga2513-epu TriQuint Semiconductor, tga2513-epu Datasheet - Page 2

• Manufacturer Part Number: tga2513-epu
• Description: Wideband Lna With Agc
• Manufacturer: TriQuint Semiconductor

TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Email: [e-mail] Web: www.triquint.com
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
1/
2/
3/
4/
5/
SYMBOL
Note: Q1-Q10 is a 720um size FET.
T
| I
T
V
V
P
P
T
V
STG
These ratings represent the maximum operable values for this device.
Current is defined under no RF drive conditions. Combinations of supply voltage, supply
current, input power, and output power shall not exceed P
When operated at this power dissipation with a base plate temperature of 70 C, the median
life is 1 E+6 hours.
Junction operating temperature will directly affect the device median time to failure (T
maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
These ratings apply to each individual FET.
I
V
V
CH
G
g1
g2
+
IN
M
+
D
SYMBOL
I
BVGD, Q1-Q10
BVGS, Q1-Q10
V
dss, Q1- Q10
|
p, Q1-Q10
Positive Supply Voltage
Gate 1 Supply Voltage Range
Gate 2 Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
PARAMETER
Saturated Drain Current
Pinch-off Voltage
Breakdown Voltage Gate-
Drain
Breakdown Voltage Gate-
Source
PARAMETER
(T
DC PROBE TEST
A
MAXIMUM RATINGS 1/
= 25 C, Nominal)
TABLE II
TABLE I
Advance Product Information
MINIMUM
-30
-30
-1
--
D
-0.5 V TO +3.5 V
.
-65 to 117 C
-2V TO 0 V
151 mA
21 dBm
VALUE
117 C
320 C
10 mA
1.5 W
MAXIMUM
7 V
216
-5
-5
0
September 2, 2005
TGA2513-EPU
UNIT
NOTES
mA
2/, 3/
4/, 5/
V
V
V
2/
2/
2/
M
). For
2