tqm613017 TriQuint Semiconductor, tqm613017 Datasheet - Page 4

• Manufacturer Part Number: tqm613017
• Description: Powerpadtm Cdma/amps Cellular Band Pa/duplexer Module
• Manufacturer: TriQuint Semiconductor

Note 1: Test Conditions: V
Note 2: Noise power is computed from a differential NF measurement of the Rx path while under CDMA Tx input RF drive with an added noise of 40dB above
AMPS Mode Electrical Characteristics
Note 1: Test Conditions: V
Rx Characteristics
Parameter
Center Frequency
Maximum Insertion loss
Absolute Attenuation
VSWR at Rx Terminal
Data Sheet:
For additional information and latest specifications, see our website:
Revision D, April 30, 2007
Parameter
Ruggedness
Noise Power in Rx band at Rx terminal ²
Tx Leakage at Rx terminal
1039-1065 MHz
1050-1100 MHz
1200-1270 MHz
1648-1698 MHz
2472-2547 MHz
779-804 MHz
824-849 MHz
Parameter
RF Frequency
Power Output
P_H
Large Signal Gain
PAE
G_H
G_HVT
thermal noise floor .
PowerPad
1
CC
=3.4V, V
CC
=3.4V, V
REF
TM
=2.85V, T
REF
CDMA/AMPS Cellular Band PA/Duplexer Module
Conditions
Pout = +25.5dBm, 10:1 VSWR all phases;
RX Port 5:1 VSWR all phases.
Pout=+25.5dBm, 0°C<Temp<+70°C, 40dB noise
source at CDMA input. F
Pout=+25.5dBm, 70°C<Temp<+85°C, 40dB noise
source at CDMA input. F
Pout= +25.5dBm; -25°C<Temp<70°C, Vcc=3.4V
Conditions
-30°C<Temp<85°C
-30°C<Temp<85°C
-30°C<Temp<85°C
-30°C<Temp<85°C
Conditions
+25°C<T<+70°C
Pout = 28dBm, Vcc=3.4V, 25C
Pout = 28dBm, Vcc=3.2 to 4.4V, -30°C>T>85°C
Pout = 28dBm, Vcc=3.4V, 25°C
=2.85V, T
C
= +25
1
C
°
= +25
C, unless otherwise specified.
°
C, unless otherwise specified.
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RX
RX
=F
=F
TX
TX
+ 45MHz.
+ 45MHz.
Min.
Min.
824
28
20
18
Min.
No damage/degradation
Typ/Nom
881.5
2.0:1
2.8
35
50
42
42
50
55
25
Typ/Nom
Typ/Nom
-181
-30
TQM613017
31
Max.
2.5:1
4.0
-26.8
Max.
-180
-178
-
-
-
-
-
-
-
Max.
849
28
30
Data Sheet
dBm/Hz
dBm/Hz
Units
dBm
Units
MHz
dB
dB
dB
dB
dB
dB
dB
dB
Units
MHz
dBm
dB
dB
%
4