upa1434h Renesas Electronics Corporation., upa1434h Datasheet

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upa1434h

Manufacturer Part Number
upa1434h
Description
Npn Silicon Power Transistor Array Low Speed Switching Use Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
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Quantity
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Part Number:
UPA1434H
Manufacturer:
NEC
Quantity:
20 000
Document No. IC-3480
Date Published September 1994 P
Printed in Japan
DESCRIPTION
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
ORDERING INFORMATION
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage V
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits
Part Number
The PA1434 is NPN silicon epitaxial Power Transistor
Easy mount by 0.1 inch of terminal interval.
High h
h
V
(T
(T
FE
CE(sat)
PA1434H
a
c
= 800 to 3200 (at I
= 25 ˚C)
= 25 ˚C)
FE
= 0.5 V
300 s, Duty Cycle
. Low V
MAX.
CE(sat)
(at I
NPN SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
.
C
The information in this document is subject to change without notice.
C
= 0.5 A)
= 2 A)
10 %
LOW SPEED SWITCHING USE
V
V
I
I
I
P
P
T
T
C(DC)
C(pulse)
B(DC)
T1
T2
j
stg
CBO
CEO
EBO
**
**
–55 to +150
*
Quality Grade
DATA SHEET
a
INDUSTRIAL USE
Standard
= 25 ˚C)
150
0.6
3.5
60
60
28
7
3
6
A/unit
A/unit
A/unit
W
W
˚C
˚C
V
V
V
SILICON TRANSISTOR ARRAY
1
2
1.4
1
2 3 4 5 6 7 8 910
0.6 ±0.1
26.8 MAX.
3
CONNECTION DIAGRAM
PACKAGE DIMENSION
4
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
(in millimeters)
1, 10: Emitter (E)
5
PIN NO.
6
2.54
7
PA1434
8
4.0
©
9
0.5 ±0.1
1.4
10
1994

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upa1434h Summary of contents

Page 1

NPN SILICON POWER TRANSISTOR ARRAY DESCRIPTION The PA1434 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount by 0.1 inch of terminal interval. • ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO DC Current Gain h FE1 DC Current Gain h FE2 Collector Saturation Voltage V CE(sat) Base Saturation Voltage V BE(sat) Turn On Time t on ...

Page 3

TYPICAL CHARACTERISTICS ( ˚C) a DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Case Temperature - ˚C C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1434H 4 4 Circuits Operation ...

Page 4

DC CURRENT GAIN vs. COLLECTOR CURRENT 10000 5000 2000 1000 75 ˚C 25 ˚C 500 –25 ˚C 200 100 0.001 0.005 0.01 0.05 0.1 0 Collector Current - BASE AND COLLECTOR SATURATION VOLTAGE vs.COLLECTOR ...

Page 5

REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1434 Document No. TEI-1202 IEI-1209 IEI-1207 ...

Page 6

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...

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