ao4485 Alpha & Omega Semiconductor, ao4485 Datasheet
ao4485
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ao4485 Summary of contents
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... AO4485 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4485/L uses advanced trench technology to provide excellent R with low gate charge. This DS(ON) device is suitable for use as a DC-DC converter application. AO4485 and AO4485L are electrically identical. -RoHS Compliant -AO4485L is Halogen Free ...
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... AO4485 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4485 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 -10V (Volts) DS Figure 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...
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... AO4485 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15V -10A (nC) g Figure 7: Gate-Charge Characteristics 1000 100 DS(ON) limited 0.1 T =150°C J(Max) T =25°C A 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...