m28f201-150xn6tr STMicroelectronics, m28f201-150xn6tr Datasheet - Page 9

• Manufacturer Part Number: m28f201-150xn6tr
• Description: 256k Chip Erase Flash Memory
• Manufacturer: STMicroelectronics

Figure 7. Electronic Signature Command Waveforms
Program and Program Verify Modes. The Pro-
gram Mode is set-up by writing 40h to the command
register. This is followed by a second write cycle
which latches the address and data of the byte to
be programmed. The rising edge of W during this
second cycle starts the programming operation.
Programming is followed by a Program Verify of the
data written.
Program Verify Mode is set-up by writing C0h to the
command register. The rising edge of W during the
set-up of the Program Verify Mode stops the Pro-
V PP
A0-A17
E
G
W
DQ0-DQ7
tGHWL
SIGNATURE SET-UP
tVPHEL
READ ELECTRONIC
tELWL
tWLWH
tDVWH
COMMAND
tWHEH
tWHDX
gramming operation. The following read cycle, of
the address already latched during programming,
is made with an internally generated margin volt-
age applied, reading valid data indicates that all bits
have been programmed.
Reset Mode. This command is used to safely abort
Erase or Program Modes. The Reset Mode is
set-up and performed by writing FFh two times to
the command register. The command should be
followed by writing a valid command to the the
command register (for example Read).
tWHGL
tAVQV
tELQV
00000h-00001h
MANUFACTURER
OR DEVICE
READ
tGLQV
DATA OUT
M28F201
tGHQZ
tEHQZ
AI00644
tAXQX
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