upa2708tp-e2-az Renesas Electronics Corporation., upa2708tp-e2-az Datasheet

upa2708tp-e2-az

Manufacturer Part Number

upa2708tp-e2-az

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2708TP-E2-AZ.pdf (7 pages)

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Document No. G17034EJ1V0DS00 (1st edition)

Date Published June 2005 NS CP(K)

Printed in Japan

• Low on-state resistance

• Low C

• Small and surface mount package (Power HSOP8)

ABSOLUTE MAXIMUM RATINGS (T

Notes 1. PW ≤ 10

THERMAL RESISTANCE

Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

DESCRIPTION

channel MOS Field Effect Transistor designed for

DC/DC converter and power management applications

of notebook computer.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Total Power Dissipation

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Channel to Ambient

Channel to Case

The

DS(on)1

DS(on)2

2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec

3. Starting T

iss

PA2708TP which has a heat spreader is N-

= 5.5 mΩ MAX. (V

= 7.5 mΩ MAX. (V

: C

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

= 4700 pF TYP. (V

s, Duty Cycle ≤ 1%

Note

Note1

= 25°C, V

Note2

Note3

= 25°C)

= 0 V)

= 10 V, I

= 4.5 V, I

N-CHANNEL POWER MOS FET

= 15 V, R

= 10 V, V

= 9.0 A)

= 25°C, All terminals are connected.)

= 25 Ω, L = 100

DATA SHEET

SWITCHING

= 0 V)

D(pulse)

D(DC)

th(ch-A)

th(ch-C)

DSS

GSS

stg

MOS FIELD EFFECT TRANSISTOR

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in

−55 to +150

H, V

96.2

3.68

PA2708TP-E1-AZ

PA2708TP-E2-AZ

28.9

±20

±40

±68

150

4.3

external electrode.)

PART NUMBER

PA2708TP-E1

PA2708TP-E2

= 20 → 0 V

°C/W

°C

Note

PA2708TP

Power HSOP8

PACKAGE

2004

Related parts for upa2708tp-e2-az

upa2708tp-e2-az Summary of contents

Page 1

DESCRIPTION The µ PA2708TP which has a heat spreader is N- channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance R = 5.5 mΩ MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

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upa2708tp-e2-az Renesas Electronics Corporation., upa2708tp-e2-az Datasheet

upa2708tp-e2-az

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