upa2755gr Renesas Electronics Corporation., upa2755gr Datasheet

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upa2755gr

Manufacturer Part Number
upa2755gr
Description
Switching N-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. G16639EJ1V0DS00 (1st edition)
Date Published November 2003 NS CP(K)
Printed in Japan
DESCRIPTION
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
The
R
R
Dual chip type
Low on-state resistance
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
2. Mounted on ceramic substrate of 2000 mm
3. Starting T
PA2755GR is Dual N-channel MOS Field Effect
PART NUMBER
iss
= 18 m MAX. (V
= 29 m MAX. (V
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
: C
PA2755GR
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 650 pF TYP.
10 s, Duty Cycle
ch
Note1
C
= 25°C, V
= 25°C)
Note3
Note3
DS
GS
GS
GS
= 0 V)
= 0 V)
= 10 V, I
= 4.5 V, I
DD
Note2
Note2
= 15 V, R
N-CHANNEL POWER MOS FET
1%
D
D
Power SOP8
= 4.0 A)
PACKAGE
= 4.0 A)
A
G
= 25°C, All terminals ar e connected.)
= 25 , V
DATA SHEET
I
D(pulse)
V
I
V
D(DC)
E
T
T
SWITCHING
P
P
I
DSS
GSS
AS
stg
AS
ch
T
T
2
x 2.2 mm
GS
MOS FIELD EFFECT TRANSISTOR
= 20
55 to +150
±8.0
±20
±32
150
1.7
2.0
6.4
30
8
0 V
PACKAGE DRAWING (Unit: mm)
8
1
5.37 MAX.
0.40
mJ
°C
°C
1.27
W
W
V
V
A
A
A
+0.10
–0.05
0.78 MAX.
5
4
PA2755GR
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1
2
7, 8: Drain 1
3
4
5, 6: Drain 2
0.5 ±0.2
: Source 1
: Gate 1
: Source 2
: Gate 2
6.0 ±0.3
(1/2 circuit)
4.4
Source
Drain
0.8
Body
Diode
0.10
2003

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upa2755gr Summary of contents

Page 1

DESCRIPTION The PA2755GR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Dual chip type Low on-state resistance MAX DS(on)1 GS ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 40 Pulsed 4 0.0 0.2 0.4 0.6 0.8 1 Drain to Source Voltage - V DS GATE ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 4 -50 - 100 125 150 175 T ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 Starting 6 100 ...

Page 7

The information in this document is current as of November, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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